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參數(shù)資料
| 型號： | AM42BDS640AGBC9IS |
| 廠商： | SPANSION LLC |
| 元件分類： | 存儲器 |
| 英文描述： | Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
| 中文描述： | SPECIALTY MEMORY CIRCUIT, PBGA93 |
| 封裝： | 8 X 11.60 MM, FBGA-93 |
| 文件頁數(shù)： | 32/72頁 |
| 文件大?。?/td> | 1064K |
| 代理商： | AM42BDS640AGBC9IS |
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November 1, 2002
Am42BDS640AG
37
P R E L I M INARY
Notes:
1. Typical values measured at VCC = 2.0 V, TA = 25°C. Not 100% tested.
2. Undershoot is –1.0 V when pulse width
≤ 20 ns.
3. Overshoot is VCC + 1.0 V when pulse width ≤ 20 ns.
4. Overshoot and undershoot are sampled, not 100% tested.
SRAM DC AND OPERATING CHARACTERISTICS
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Leakage Current
V
IN = VSS to VCC
–1.0
1.0
A
ILO
Output Leakage Current
CE1#s = V
IH, CE2s = VIL or OE# =
VIH or WE# = VIL, VIO= VSS to VCC
–1.0
1.0
A
I
CC
Operating Power Supply Current
I
IO = 0 mA, CE1#s = VIL, CE2s =
WE# = V
IH, VIN = VIH or VIL
5mA
I
CC1s
Average Operating Current
Cycle time = 1 s, 100% duty,
I
IO = 0 mA, CE1#s ≤ 0.2 V,
CE2
≥ V
CC – 0.2 V, VIN ≤ 0.2 V or
V
IN ≥ VCC – 0.2 V
13
mA
I
CC2s
Average Operating Current
Cycle time = Min., I
IO = 0 mA,
100% duty, CE1#s = V
IL, CE2s =
V
IH, VIN = VIL = or VIH
825
mA
VOL
Output Low Voltage
IOL = 0.1 mA
0.2
V
OH
Output High Voltage
I
OH = –0.1 mA
1.4
V
I
SB1
Standby Current (CMOS)
CE1#s
≥ V
CC – 0.2 V, CE2 ≥ VCC –
0.2 V (CE1#s controlled) or CE2
≤
0.2 V (CE2s controlled), CIOs =
VSS or VCC, Other input = 0 ~ VCC
15
A
V
IL
Input Low Voltage
–0.2
0.4
V
IH
Input High Voltage
1.4
V
CC+0.2
V
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