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鍙冩暩(sh霉)璩囨枡
| 鍨嬭櫉锛� | A3P125-1VQ100T |
| 寤犲晢锛� | Microsemi SoC |
| 鏂囦欢闋佹暩(sh霉)锛� | 11/220闋� |
| 鏂囦欢澶�?銆�?/td> | 0K |
| 鎻忚堪锛� | IC FPGA 1KB FLASH 125K 100-VQFP |
| 妯�(bi膩o)婧�(zh菙n)鍖呰锛� | 90 |
| 绯诲垪锛� | ProASIC3 |
| RAM 浣嶇附瑷�(j矛)锛� | 36864 |
| 杓稿叆/杓稿嚭鏁�(sh霉)锛� | 71 |
| 闁€鏁�(sh霉)锛� | 125000 |
| 闆绘簮闆诲锛� | 1.425 V ~ 1.575 V |
| 瀹夎椤炲瀷锛� | 琛ㄩ潰璨艰 |
| 宸ヤ綔婧害锛� | -40°C ~ 125°C |
| 灏佽/澶栨锛� | 100-TQFP |
| 渚涙噳(y墨ng)鍟嗚ō(sh猫)鍌欏皝瑁濓細 | 100-VQFP锛�14x14锛� |
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ProASIC3 DC and Switching Characteristics
2-94
Revision 13
Timing Characteristics
Figure 2-34 RAM Reset. Applicable to Both RAM4K9 and RAM512x18.
CLK
RESET
DOUT|RD
Dn
tCYC
tCKH
tCKL
tRSTBQ
Dm
Table 2-116 RAM4K9
Commercial-Case Conditions: TJ = 70掳C, Worst-Case VCC = 1.425 V
Parameter
Description
鈥�2
鈥�1
Std. Units
tAS
Address setup time
0.25 0.28 0.33
ns
tAH
Address hold time
0.00 0.00 0.00
ns
tENS
REN, WEN setup time
0.14 0.16 0.19
ns
tENH
REN, WEN hold time
0.10 0.11 0.13
ns
tBKS
BLK setup time
0.23 0.27 0.31
ns
tBKH
BLK hold time
0.02 0.02 0.02
ns
tDS
Input data (DIN) setup time
0.18 0.21 0.25
ns
tDH
Input data (DIN) hold time
0.00 0.00 0.00
ns
tCKQ1
Clock High to new data valid on DOUT (output retained, WMODE = 0)
2.36 2.68 3.15
ns
Clock High to new data valid on DOUT (flow-through, WMODE = 1)
1.79 2.03 2.39
ns
tCKQ2
Clock High to new data valid on DOUT (pipelined)
0.89 1.02 1.20
ns
tC2CWWL1
Address collision clk-to-clk delay for reliable write after write on same
address鈥擜pplicable to Closing Edge
0.33 0.28 0.25
ns
tC2CWWH1
Address collision clk-to-clk delay for reliable write after write on same
address鈥擜pplicable to Rising Edge
0.30 0.26 0.23
ns
tC2CRWH1
Address collision clk-to-clk delay for reliable read access after write on same
address鈥擜pplicable to Opening Edge
0.45 0.38 0.34
ns
tC2CWRH1
Address collision clk-to-clk delay for reliable write access after read on same
address鈥� Applicable to Opening Edge
0.49 0.42 0.37
ns
tRSTBQ
RESET Low to data out Low on DOUT (flow-through)
0.92 1.05 1.23
ns
RESET Low to Data Out Low on DOUT (pipelined)
0.92 1.05 1.23
ns
tREMRSTB
RESET removal
0.29 0.33 0.38
ns
Notes:
1. For more information, refer to the application note Simultaneous Read-Write Operations in Dual-Port SRAM for Flash-
2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
鐩搁棞(gu膩n)PDF璩囨枡 |
PDF鎻忚堪 |
|---|---|
| A3P125-1VQG100T | IC FPGA 1KB FLASH 125K 100-VQFP |
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| EP4CE30F29C9LN | IC CYCLONE IV FPGA 30K 780FBGA |
| EP4CE30F29C8N | IC CYCLONE IV FPGA 30K 780FBGA |
鐩搁棞(gu膩n)浠ｇ悊鍟�/鎶€琛�(sh霉)鍙冩暩(sh霉) |
鍙冩暩(sh霉)鎻忚堪 |
|---|---|
| A3P125-1VQ144 | 鍒堕€犲晢:ACTEL 鍒堕€犲晢鍏ㄧū:Actel Corporation 鍔熻兘鎻忚堪:ProASIC3 Flash Family FPGAs |
| A3P125-1VQ144ES | 鍒堕€犲晢:ACTEL 鍒堕€犲晢鍏ㄧū:Actel Corporation 鍔熻兘鎻忚堪:ProASIC3 Flash Family FPGAs |
| A3P125-1VQ144I | 鍒堕€犲晢:ACTEL 鍒堕€犲晢鍏ㄧū:Actel Corporation 鍔熻兘鎻忚堪:ProASIC3 Flash Family FPGAs |
| A3P125-1VQ144PP | 鍒堕€犲晢:ACTEL 鍒堕€犲晢鍏ㄧū:Actel Corporation 鍔熻兘鎻忚堪:ProASIC3 Flash Family FPGAs |
| A3P125-1VQ144T | 鍒堕€犲晢:ACTEL 鍒堕€犲晢鍏ㄧū:Actel Corporation 鍔熻兘鎻忚堪:Automotive ProASIC3 Flash Family FPGAs |
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