參數(shù)資料
型號: WED3DL3216V10BI
廠商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分類: DRAM
英文描述: 16M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA119
封裝: 17 X 23 MM, MO-163, BGA-119
文件頁數(shù): 8/27頁
文件大小: 989K
代理商: WED3DL3216V10BI
16
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WED3DL3216V
November, 2005
Rev. 1
White Electronic Designs Corp. reserves the right to change products or specications without notice.
PAGE READ CYCLE AT DIFFERENT BANK @ BURST LENGTH = 4
NOTES:
1.
CE# can be don’t cared when RAS#, CAS# and WE# are high at the clock high going edge.
2.
To interrupt a burst read by row precharge, both the read and the precharge banks must be the same.
CLOCK
CKE
CE#
RAS#
CAS#
ADDR
BA
A10/AP
CL = 2
WE#
DQM
01
2
3
4
56
78
9
10
11
12
13
14
15
16
17
18
19
DON’T CARE
Precharge
(All Banks)
DQ
CL = 3
Precharge
(All Banks)
Row Active
(A-Bank)
Precharge
(A-Bank)
Read
(B-bank)
Read
(A-bank)
HIGH
Note 2
RAa
CAa
CAc
CBd
RAa
QAa0
QAa1
QAa2
QAa3
QAa0
QAa1
QAa2
QAa3
QBb2
QAc1
QAc0
QBb3
QBb0
Read
(A-bank)
Read
(B-bank)
CBb
Note 1
Row Active
(B-Bank)
Read
(A-bank)
CAe
RBb
QBb1
QBb2
QBb3
QAc0
QAc1
QBd0
QBd1
QAe0
QAe1
QBb0
QBb1
QBd0
QAe1
QAe0
QBd1
RBb
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