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參數(shù)資料
| 型號： | WED3DL3216V10BI |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 16M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA119 |
| 封裝： | 17 X 23 MM, MO-163, BGA-119 |
| 文件頁數(shù)： | 14/27頁 |
| 文件大?。?/td> | 989K |
| 代理商： | WED3DL3216V10BI |
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21
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WED3DL3216V
November, 2005
Rev. 1
White Electronic Designs Corp. reserves the right to change products or specications without notice.
READ INTERRUPTED BY PRECHARGE COMMAND & READ BURST STOP @ BURST
LENGTH = FULL PAGE
NOTES:
1.
At full page mode, burst is end at the end of burst. So auto precharge is possible.
2.
About the valid DQs after burst stop, it is same as the case of RAS# interrupt. Both cases are illustrated in above timing diagram. See the label 1, 2. But at burst write, Burst
stop and RAS# interrupt should be compared carefully. Refer to the timing diagram of “Full page write burst stop cycle.”
3.
Burst stop is valid at every burst length.
CLOCK
CKE
CE#
RAS#
CAS#
ADDR
BA
A10/AP
CL = 2
WE#
DQM
01
2
3
4
56
78
9
10
11
12
13
14
15
16
17
18
19
DON’T CARE
DQ
CL = 3
Row Active
(A-Bank)
Precharge
(A-Bank)
Read
(A-Bank)
Read
(A-Bank)
HIGH
Note 2
RAa
CAa
2
CAb
RAa
QAa0
QAa1
QAa2
QAa3
QAa0
QAa1
QAa2
QAa3
QAb5
QAb4
QAb0
QAb3
QAb2
QAb1
QAa4
Burst Stop
1
2
QAb4
QAb0
QAb3
QAb2
QAb1
QAb5
1
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| WED3DL3216V10ES | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:16Mx32 SDRAM |
| WED3DL3216V7BC | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:16Mx32 SDRAM |
| WED3DL3216V7BI | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:16Mx32 SDRAM |
| WED3DL3216V7ES | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:16Mx32 SDRAM |
| WED3DL3216V8BC | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:16Mx32 SDRAM |
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