參數(shù)資料
型號(hào)： W25X80AVDAIZ
廠商： WINBOND ELECTRONICS CORP
元件分類： PROM
英文描述： 1M X 8 FLASH 2.7V PROM, PDIP8
封裝： 0.300 INCH, ROHS COMPLIANT, PLASTIC, DIP-8
文件頁(yè)數(shù)： 19/45頁(yè)
文件大?。?/td> 1344K
代理商： W25X80AVDAIZ
W25X10A, W25X20A, W25X40A, W25X80A
- 26 -
10.2.14 Power-down (B9h)
Although the standby current during normal operation is relatively low, standby current can be further
reduced with the Power-down instruction. The lower power consumption makes the Power-down
instruction especially useful for battery powered applications (See ICC1 and ICC2 in AC
Characteristics). The instruction is initiated by driving the /CS pin low and shifting the instruction code
“B9h” as shown in figure 15.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Power-
down instruction will not be executed. After /CS is driven high, the power-down state will entered
within the time duration of tDP (See AC Characteristics). While in the power-down state only the
Release from Power-down / Device ID instruction, which restores the device to normal operation, will
be recognized. All other instructions are ignored. This includes the Read Status Register instruction,
which is always available during normal operation. Ignoring all but one instruction makes the Power
Down state a useful condition for securing maximum write protection. The device always powers-up in
the normal operation with the standby current of ICC1.
Figure 15. Deep Power-down Instruction Sequence Diagram
相關(guān)PDF資料
PDF描述
W25X80ALSSIG 1M X 8 FLASH 2.7V PROM, PDSO8
W25X40ALDAIZ 512K X 8 FLASH 2.7V PROM, PDIP8
W25X10ALSNIG 128K X 8 FLASH 2.7V PROM, PDSO8
W27C257P-12 32K X 8 EEPROM 12V, 120 ns, PQCC32
W27L01-70 128K X 8 EEPROM 12V, 70 ns, PDIP32
相關(guān)代理商/技術(shù)參數(shù)
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