參數(shù)資料
型號: W25Q16DWSFIG
廠商: WINBOND ELECTRONICS CORP
元件分類: PROM
英文描述: 16M X 1 SPI BUS SERIAL EEPROM, PDSO16
封裝: 0.300 INCH, GREEN, PLASTIC, SOIC-16
文件頁數(shù): 40/83頁
文件大?。?/td> 1268K
代理商: W25Q16DWSFIG
W25Q16DW
Publication Release Date: April 01, 2011
- 45 -
Preliminary - Revision A
DO
(IO
1)
Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low
and shifting the instruction code “20h” followed a 24-bit sector address (A23-A0) (see Figure 2). The
Sector Erase instruction sequence is shown in Figure 21a & 21b.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done the
Sector Erase instruction will not be executed. After /CS is driven high, the self-timed Sector Erase
instruction will commence for a time duration of tSE (See AC Characteristics). While the Sector Erase
cycle is in progress, the Read Status Register instruction may still be accessed for checking the status of
the BUSY bit. The BUSY bit is a 1 during the Sector Erase cycle and becomes a 0 when the cycle is
finished and the device is ready to accept other instructions again. After the Sector Erase cycle has
finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Sector Erase
instruction will not be executed if the addressed page is protected by the Block Protect (CMP, SEC, TB,
BP2, BP1, and BP0) bits (see Status Register Memory Protection table).
/CS
CLK
DI
(IO
0)
Mode 0
Mode 3
0
1
2
3
4
5
6
7
Instruction (20h)
High Impedance
8
9
29
30
31
24-Bit Address
23
22
2
1
0
*
Mode 0
Mode 3
= MSB
*
Figure 21a. Sector Erase Instruction (SPI Mode)
/CS
CLK
Mode 0
Mode 3
0
1
IO
0
IO
1
IO
2
IO
3
20h
Instruction
2
3
4
5
20
16
12
8
21
17
22
18
23
19
13
9
14
10
15
11
A23-16
6
7
4
0
5
1
6
2
7
3
A15-8
A7-0
Mode 0
Mode 3
Figure 21b. Sector Erase Instruction (QPI Mode)
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