
BCRTM-41
11.0 DC ELECTRICAL CHARACTERISTICS
(VDD = 5.0V
± 10%; -55°C < TC < + 125°C)
Notes:
1. Supplied as a design limit, but not guaranteed or tested.
2. Not more than one output may be shorted at a time for a maximum duration of one second.
3. Measured only for initial qualification, and after process or design changes which may affect input/output capacitance.
4. Includes current through input pull-up. Instantaneous surge currents on the order of 1 ampere can occur during output switching.
Voltage supply should be adequately sized and decoupled to handle a large current surge.
5. All inputs with internal pull-ups should be left floating. All other inputs should be tied high or low.
6. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions
VIH = VIH(min) +20%, -0%; VIL = VIL(max) +0%, -50%, as specified herein, for TTL-compatible inputs.
Devices may be tested using input voltage within the above specified range, but are guaranteed to VIH(min) and VIL(max).
7. To 1.0E6 total dose; above this level, CMOS I/Os required.
8. Guaranteed to pre- and post-irradiation limits.
SYMBOL
PARAMETER
CONDITION
MINIMUM
MAXIMUM
UNIT
VIL
Rad and
Non-Rad
Low-level input voltage
TTL inputs
0.8
V
VIH
Non-Rad
High-level input voltage
TTL inputs
2.0
V
VIH
Rad-Hard
High-level input voltage 6
TTL inputs
7
2.2
V
IIN
Non-Rad
Input leakage current
TTL inputs
Inputs with pull-up resistors
VIN = VDD or VSS
VIN = VDD
VIN = VSS
-1
-550
-1
-80
A
IIN
Rad-Hard
Input leakage current
TTL7
Inputs with pull-up resistors
VIN = VDD or VSS
VIN = VDD
VIN = VSS
-10
-900
10
-150
A
VOL
1
Low-level output voltage
TTL outputs
IOL = 3.2mA
0.4
V
VOH
1
High-level output voltage
TTL outputs
IOH = -400A
2.4
V
IOZ
Three-state output leakage current
TTL outputs
VO = VDD or VSS
-10
10
A
IOS
Short-circuit output current
1, 2
VDD = 5.5V, VO = VDD
VDD = 5.5V, VO = 0V
-110
110
mA
CIN
Input capacitance 3
 = 1MHz @ 0V
10
pF
COUT
Output capacitance 3
 = 1MHz @ 0V
15
pF
CIO
Bidirect I/O capacitance 3
 = 1MHz @ 0V
20
pF
IDD
Average operating current
1, 4
 = 12MHz, C
L = 50pF
50
mA
QIDD
Quiescent current8
See Note 5, Tc = +125oC
Tc = 25oC, -55oC
1
35
mA
A