
User’s Manual U16890EJ1V0UD
681
CHAPTER 27 FLASH MEMORY (TWO POWER)
The following products are the on-chip flash memory versions (two power) of the V850ES/KG1.
Caution There are differences in noise immunity and noise radiation between the flash memory and mask
ROM versions. When pre-producing and application set with the flash memory version and then
mass-producing it with the mask ROM version, be sure to conduct sufficient evaluation for the
commercial samples (not engineering samples) of the mask ROM version.
For the electrical specifications related to the flash memory rewriting, refer to CHAPTER 29
ELECTRICAL SPECIFICATIONS (STANDARD PRODUCTS (MASK ROM VERSION OF 128 KB OR
LESS AND TWO-POWER FLASH MEMORY VERSION), (A) GRADE PRODUCTS).
μ
PD70F3214, 70F3214Y: Products with 128 KB flash memory
When an instruction is fetched from this flash memory, 4 bytes can be accessed with 1 clock, in the same manner
as the mask ROM versions.
Data can be written to the flash memory with the flash memory mounted on the target system (on-board). Connect
a dedicated flash programmer to the target system to write the flash memory.
The following are the assumed environments and applications of flash memory.
{
Changing software after soldering the V850ES/KG1 onto the target system
{
Producing many variations of a product in small quantities by changing the software
{
Adjusting data when mass production is started
27.1 Features
4-byte/1-clock access (during instruction fetch access)
Erasing all areas at once
Communication with dedicated flash programmer via serial interface
Erase/write voltage: V
PP
= 10 V
On-board programming
Remark
For the differences between a two-power flash memory and single-power flash memory, refer to
Caution
in
26.1 Features
.