參數(shù)資料
型號(hào)： TMS44100P
廠商： Texas Instruments, Inc.
英文描述： 4194304-WORD BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORIES
中文描述： 4194304字1位動(dòng)態(tài)隨機(jī)存取記憶體
文件頁(yè)數(shù)： 8/25頁(yè)
文件大?。?/td> 383K
代理商： TMS44100P
TMS44100, TMS44100P, TMS46100, TMS46100P
4194304-WORD BY 1-BIT
DYNAMIC RANDOM-ACCESS MEMORIES
SMHS561A – MARCH 1995 – REVISED JUNE 1995
8
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
capacitance over recommended ranges of supply voltage and operating free-air temperature,
f = 1 MHz (see Note 6)
PARAMETER
MIN
MAX
UNIT
Ci(A)
Ci(RC)
Ci(W)
Co
NOTE 6: VCC = 5 V
±
.5 V for the TMS44100 devices, VCC = 3.3 V
±
0.3 V for the TMS46100 devices, and the bias on pins under test is 0 V.
Input capacitance, A0–A10
5
pF
Input capacitance, CAS and RAS
7
pF
Input capacitance, W
7
pF
Output capacitance
7
pF
switching characteristics over recommended ranges of supply voltage and operating free-air
temperature
PARAMETER
’4x100-60
’4x100P-60
’4x100-70
’4x100P-70
’4x100-80
’4x100P-80
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
tAA
tCAC
tCPA
tRAC
tCLZ
tOFF
NOTE 7: tOFF is specified when the output is no longer driven.
Access time from column address
30
35
40
ns
Access time from CAS low
15
18
20
ns
Access time from column precharge
35
40
45
ns
Access time from RAS low
60
70
80
ns
CAS to output in low impedance
0
0
0
ns
Output disable time after CAS high (see Note 7)
0
15
0
18
0
20
ns
A
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