參數(shù)資料
型號: TMS44100P
廠商: Texas Instruments, Inc.
英文描述: 4194304-WORD BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORIES
中文描述: 4194304字1位動態(tài)隨機(jī)存取記憶體
文件頁數(shù): 17/25頁
文件大?。?/td> 383K
代理商: TMS44100P
TMS44100, TMS44100P, TMS46100, TMS46100P
4194304-WORD BY 1-BIT
DYNAMIC RANDOM-ACCESS MEMORIES
SMHS561A – MARCH 1995 – REVISED JUNE 1995
17
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
PARAMETER MEASUREMENT INFORMATION
Valid
Out
RAS
CAS
A0–A10
W
Q
D
Row
Column
Don’t Care
Column
tRASP
tRP
Don’t Care
tPRWC
tRCD
tCSH
tCAS
tRSH
tCP
tCRP
tAR
tRAH
tASR
tRAD
tASC
tCAH
tCWL
tRWL
tRWD
tAWD
tRCS
tCWD
tWP
tDH
tDS
Valid
Valid
tAA
tRAC
tCLZ
tCAC
See Note A
See Note A
tCPA
tOFF
tCLZ
Valid Out
Don’t Care
Don’t Care
NOTES: A. Output can go from the high-impedance state to an invalid-data state prior to the specified access time.
B. A read or write cycle can be intermixed with read-write cycles as long as the read and write timing specifications are not violated.
Figure 9. Enhanced-Page-Mode Read-Write-Cycle Timing
A
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