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參數(shù)資料
| 型號： | T431616B-10S |
| 廠商： | TM Technology, Inc. |
| 英文描述： | 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| 中文描述： | 100萬× 16內(nèi)存為512k × 16Bit的X 2Banks同步DRAM |
| 文件頁數(shù)： | 6/31頁 |
| 文件大?。?/td> | 567K |
| 代理商： | T431616B-10S |
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TE
CH
tm
DC CHARACTERISTICS
T
A
=
-10 to +85
°
C , V
IH
(min)/V
IL
(max)=2.0V/0.8V
T431616B
Taiwan Memory Technology, Inc. reserves the right
P. 6
to change products or specifications without notice.
Publication Date: JUL. 2001
Revision:A
Parameter
Symbol
MAX.
Unit
Test Condition
Note
Operating Current
( One Bank
Active)
I
CC1
120
mA
Burst Length = 1
t
RC
≥
t
RC
(min) ,
t
CC
≥
t
CC
(min),I
OL
= 0 mA
1,3
I
CC2
P
2
CKE
≤
V
IL
(max),
t
CC
=15ns
Precharge Standby
Current in power-
down mode
I
CC2
PS
2
mA
CKE
≤
V
IL
(max),CLK
≤
V
IL
(max),
t
CC
=
∞
3
I
CC2
N
30
CKE
≥
V
IH
(min),
CS
≥
V
IH
(min),
t
CC
=15ns
Input signals are changed one time during 30ns
CKE
≥
V
IH
(min),CLK
≤
V
IL
(min),
t
CC
=
∞
Precharge Standby
Current in non
power-down mode
I
CC2
NS
2
mA
Input signals are stable
CKE
≤
VIL(max),
t
CC
=15ns
3
I
CC3
P
10
Active Standby
Current in power-
down mode
I
CC3
PS
10
mA
CKE
≤
V
IL
(max),CLK
≤
V
IL
(max),
t
CC
=
∞
3
I
CC3
N
40
CKE
≥
V
IH
(min),
CS
≥
V
IH
(min),
t
CC
=15ns
Input signals are changed one time during 30ns
CKE
≥
V
IH
(min),CLK
≤
V
IL
(min),
t
CC
=
∞
Active Standby
Current in non
power-down mode
(One Bank Active) I
CC3
NS
10
mA
Input signals are stable
3
140
CAS Latency 3
Operating Current
(Burst Mode)
I
CC4
140
mA
CAS Latency 2
I
OL
=0 mA,Page Burst
All Band Activated
t
CCD
=
t
CCD
(min)
1,3
Refresh Current
I
CC5
140
mA t
RC
≥
t
RC
(min)
2,3
Self refresh
Current
I
CC6
1
mA
CKE
≤
0.2V
Note: 1. Measured with output open. Addresses are changed only one time during
t
CC
(min)
.
2. Refresh period is 32ms. Addresses are changed only one time during
t
CC
(min)
.
3.
t
CC
: Clock cycle time.
t
RC
: Row cycle time.
t
CCD
: Column address to column address delay time.
相關PDF資料 |
PDF描述 |
|---|---|
| T431616B-20C | 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616B-20S | 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616C | 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616C-6S | 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616C-6SG | 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| T431616B-20C | 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616B-20S | 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616C | 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616C-6S | 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616C-6SG | 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
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