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參數(shù)資料
| 型號(hào)： | T431616B-10S |
| 廠商： | TM Technology, Inc. |
| 英文描述： | 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| 中文描述： | 100萬× 16內(nèi)存為512k × 16Bit的X 2Banks同步DRAM |
| 文件頁數(shù)： | 4/31頁 |
| 文件大?。?/td> | 567K |
| 代理商： | T431616B-10S |
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TE
CH
tm
PIN DESCRIPTION
T431616B
Taiwan Memory Technology, Inc. reserves the right
P. 4
to change products or specifications without notice.
Publication Date: JUL. 2001
Revision:A
PIN
NAME
INPUT FUNCTION
CLK
System Clock
Active on the positive going edge to sample all input.
CS
Chip Select
Disables or enables device operation by masking or enabling all input
except CLK,CKE and L(U)DQM
CKE
Clock Enable
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior to new command.
Disable input buffers for power down in standby.
A0 ~ A10/AP
Address
Row/column addresses are multiplexed on the same pins.
Row address : RA0 ~ RA10,column address : CA0 ~ CA7
BA
Bank Select Address
Selects bank to be activated during row address latch time.
Select bank for read/write during column address latch time.
RAS
Row Address Strobe
Latches row addresses on the positive going edge of the CLK
with
RAS
low.
Enables row access & precharge.
CAS
Column Address Strobe
Latches column addresses on the positive going edge of the CLK
with CAS low.
Enables column access .
WE
Write Enable
Enables write operation and row precharge.
Latches data in starting from
CAS
,
WE
active.
Makes data output Hi-Z,
t
SHZ
after the clock and masks the output.
L(U)DQM
Data Input/Output
Mask
Blocks data input when L(U)DQM active.
DQ0 ~ DQ15
Data Input/Output
Data inputs/outputs are multiplexed on the same pins.
V
DD
/V
SS
Power Supply/Ground
Power and ground for the input buffers and the core logic.
Data Output
Isolated power supply and ground for the output buffers to provide
V
DDQ
/V
SSQ
Power/Ground
improved noise immunity.
N.C/RFU
No
Connection/Reserved
for Future Use
This pin is recommended to be left No Connection on the device.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| T431616B-20C | 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616B-20S | 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616C | 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616C-6S | 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616C-6SG | 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| T431616B-20C | 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616B-20S | 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616C | 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616C-6S | 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616C-6SG | 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
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