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參數(shù)資料
| 型號： | T431616B-10S |
| 廠商： | TM Technology, Inc. |
| 英文描述： | 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| 中文描述： | 100萬× 16內(nèi)存為512k × 16Bit的X 2Banks同步DRAM |
| 文件頁數(shù)： | 5/31頁 |
| 文件大小： | 567K |
| 代理商： | T431616B-10S |
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TE
CH
tm
ABSOLUTE MAXIMUM RATINGS
T431616B
Taiwan Memory Technology, Inc. reserves the right
P. 5
to change products or specifications without notice.
Publication Date: JUL. 2001
Revision:A
Parameter
Symbol
Value
Unit
Voltage on Any Pin Relative To Vss
V
IN
,V
OUT
-1.0 to 4.6
V
Supply Voltage Relative To Vss
V
DD
,V
DDQ
-1.0 to 4.6
V
Short circuit Output Current
Iout
P
D
50
mA
Power Dissipation
1
W
°
C
°
C
Operating Temperature
TOPR
Tstg
-10 to +85
Storage Temperature
-55 to 125
Note :
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
RECOMMENDED DC OPERATING CONDITIONS
(T
A
= -10 to +85
°
C
, Voltage referenced to V
SS
=0V)
Parameter
Supply Voltage
Symbol
V
DD
,V
DDQ
Min.
2.7
Typ
3.3
Max.
3.6
Unit
V
Notes
Input High Voltage
V
IH
2.0
3.0
V
DD
+0.3V
V
1
Input Low Voltage
V
IL
-0.3
0
0.8
V
2
Output logic high voltage
V
OH
2.4
-
-
V
I
OH
=-2mA
Output logic low voltage
V
OL
-
-
0.4
V
I
OL
=2mA
Input leakage current
I
IL
-5
-
5
uA
3
Output leakage current
Note :
1. V
IH
(max) = 4.6V AC for pulse width
≤
10ns acceptable.
2. V
IL
(min) = -1.0V AC for pulse width
≤
10ns acceptable.
3. Any input 0V
≤
V
IN
≤
V
DD
+ 0.3V , all other pin are not under test = 0V.
4. Dout = disable, 0V
≤
V
OUT
≤
V
DD .
CAPACITANCE
(T
A
=25
°
C ,V
DD
=3.3V, f = 1MHz)
I
OL
-5
-
5
uA
4
Pin
Symbol
C
CLK
Min
2.5
Max
4.0
Unit
pF
CLOCK
ADDRESS
DQ0 ~ DQ15
C
ADD
C
OUT
2.5
4.0
5.0
6.5
pF
pF
RAS,CAS,WE,CS,CKE,LDQM,
UDQM
C
IN
2.5
5.0
pF
相關(guān)PDF資料 |
PDF描述 |
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| T431616B-20C | 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616B-20S | 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616C | 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616C-6S | 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616C-6SG | 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| T431616B-20C | 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616B-20S | 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616C | 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616C-6S | 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616C-6SG | 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
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