參數(shù)資料
型號: ST7LITE19F1M6
英文描述: ST7LITE1 - 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY.DATA EEPROM. ADC. 4 TIMERS. SPI
中文描述: ST7LITE1 - 8單電壓閃存EEPROM的MEMORY.DATA位MCU。 ADC的。 4定時器。的SPI
文件頁數(shù): 90/122頁
文件大小: 1716K
代理商: ST7LITE19F1M6
ST7LITE0, ST7SUPERLITE
90/122
1
13.7 EMC CHARACTERISTICS
Susceptibility tests are performed on a sample ba-
sis during product characterization.
13.7.1 Functional EMS
(Electro Magnetic Susceptibility)
Based on a simple running application on the
product (toggling 2 LEDs through I/O ports), the
product is stressed by two electro magnetic events
until a failure occurs (indicated by the LEDs).
I
ESD
: Electro-Static Discharge (positive and
negative) is applied on all pins of the device until
a functional disturbance occurs. This test
conforms with the IEC 1000-4-2 standard.
I
FTB
: A Burst of Fast Transient voltage (positive
and negative) is applied to V
DD
and V
SS
through
a 100pF capacitor, until a functional disturbance
occurs. This test conforms with the IEC 1000-4-
4 standard.
A device reset allows normal operations to be re-
sumed.
Figure 60. EMC Recommended power supply connection
2)
Notes:
1. Data based on characterization results, not tested in production.
2. The suggested 10
μ
F and 0.1
μ
F decoupling capacitors on the power supply lines are proposed as a good price vs. EMC
performance tradeoff. They have to be put as close as possible to the device power supply pins. Other EMC recommen-
dations are given in other sections (I/Os, RESET, OSCx pin characteristics).
Symbol
Parameter
Conditions
Neg
1)
Pos
1)
Unit
V
FESD
Voltage limits to be applied on any I/O pin
to induce a functional disturbance
Fast transient voltage burst limits to be ap-
plied through 100pF on V
DD
and V
DD
pins
to induce a functional disturbance
V
DD
=
5V, T
A
=
+25°C, f
OSC
=
8MHz
conforms to IEC 1000-4-2
-0.7
>1.5
kV
V
FFTB
V
DD
=
5V, T
A
=
+25°C, f
OSC
=
8MHz
conforms to IEC 1000-4-4
-1.2
1.2
V
DD
V
SS
0.1
μ
F
10
μ
F
V
DD
ST72XXX
ST7
DIGITAL NOISE
FILTERING
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