參數(shù)資料
型號(hào)： S29GL256N10FAI010
廠商： SPANSION LLC
元件分類： PROM
英文描述： MirrorBit Flash Family
中文描述： 16M X 16 FLASH 3V PROM, 100 ns, PBGA64
封裝： 13 X 11 MM, FBGA-64
文件頁(yè)數(shù)： 51/95頁(yè)
文件大?。?/td> 3781K
代理商： S29GL256N10FAI010
May 30, 2008 S29GL-N_00_B8
S29GL-N
55
Data
She e t
9.8
Sector Erase Command Sequence
Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two additional unlock cycles are written, and are then followed
by the address of the sector to be erased, and the sector erase command. Table 9.1 on page 60 and
Table 9.3 on page 62 shows the address and data requirements for the sector erase command sequence.
The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm
automatically programs and verifies the entire memory for an all zero data pattern prior to electrical erase.
The system is not required to provide any controls or timings during these operations.
After the command sequence is written, a sector erase time-out of 50 s occurs. During the time-out period,
additional sector addresses and sector erase commands may be written. Loading the sector erase buffer may
be done in any sequence, and the number of sectors may be from one sector to all sectors. The time between
these additional cycles must be less than 50 s, otherwise erasure may begin. Any sector erase address and
command following the exceeded time-out may or may not be accepted. It is recommended that processor
interrupts be disabled during this time to ensure all commands are accepted. The interrupts can be
re-enabled after the last Sector Erase command is written. Any command other than Sector Erase or
Erase Suspend during the time-out period resets the device to the read mode. Note that the Secured
Silicon Sector, autoselect, and CFI functions are unavailable when an erase operation in is progress.
The system must rewrite the command sequence and any additional addresses and commands.
The system can monitor DQ3 to determine if the sector erase timer has timed out (See DQ3: Sector Erase
Timer on page 68.). The time-out begins from the rising edge of the final WE# pulse in the command
sequence.
When the Embedded Erase algorithm is complete, the device returns to reading array data and addresses
are no longer latched. The system can determine the status of the erase operation by reading DQ7, DQ6, or
DQ2 in the erasing sector. Refer to the Write Operation Status section for information on these status bits.
Once the sector erase operation has begun, only the Erase Suspend command is valid. All other commands
are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs,
the sector erase command sequence should be reinitiated once the device has returned to reading array
data, to ensure data integrity.
Figure 9.4 illustrates the algorithm for the erase operation. Refer to Erase and Program Operations
on page 75 for parameters, and Figure 15.6 on page 77 for timing diagrams.
Figure 9.4 Erase Operation
Notes
1. See Table 9.1 on page 60 and Table 9.3 on page 62 for program command sequence.
2. See the section on DQ3 for information on the sector erase timer.
START
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
Data = FFh?
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
相關(guān)PDF資料
PDF描述
S29GL256N10FFI010 MirrorBit Flash Family
S29GL256N80FAI010 MirrorBit Flash Family
S29GL256N80FFI010 MirrorBit Flash Family
S29GL256N80FFI013 MirrorBit Flash Family
S29JL032H90TAI223 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL256N10FAI020 制造商:Spansion 功能描述:
S29GL256N10FFI010 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 256Mbit 32M/16M x 8bit/16bit 100ns 64-Pin Fortified BGA Tray 制造商:Spansion 功能描述:MIRRORBIT FLASH 256MB SMD 29LV256
S29GL256N10FFI012 制造商:Spansion 功能描述:Flash - NOR IC
S29GL256N10FFI020 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 256Mbit 32M/16M x 8bit/16bit 100ns 64-Pin Fortified BGA Tray 制造商:Spansion 功能描述:MIRRORBIT FLASH 256MB SMD 29LV256
S29GL256N10TFI010 功能描述:IC FLASH 制造商:cypress semiconductor corp 系列:GL-N 包裝:托盤 零件狀態(tài):在售 存儲(chǔ)器類型:非易失 存儲(chǔ)器格式:閃存 技術(shù):FLASH - NOR 存儲(chǔ)容量:256Mb （32M x 8，16M x 16） 寫周期時(shí)間 - 字，頁(yè):100ns 訪問(wèn)時(shí)間:100ns 存儲(chǔ)器接口:并聯(lián) 電壓 - 電源:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TA） 安裝類型:表面貼裝 封裝/外殼:56-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商器件封裝:56-TSOP 標(biāo)準(zhǔn)包裝:91
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*