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參數(shù)資料
| 型號(hào)： | S29GL256N10FAI010 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | MirrorBit Flash Family |
| 中文描述： | 16M X 16 FLASH 3V PROM, 100 ns, PBGA64 |
| 封裝： | 13 X 11 MM, FBGA-64 |
| 文件頁(yè)數(shù)： | 47/95頁(yè) |
| 文件大?。?/td> | 3781K |
| 代理商： | S29GL256N10FAI010 |
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May 30, 2008 S29GL-N_00_B8
S29GL-N
51
Data
She e t
The abort condition is indicated by DQ1 = 1, DQ7 = DATA# (for the last address location loaded), DQ6 =
toggle, and DQ5=0. A Write-to-Buffer-Abort Reset command sequence must be written to reset the device for
the next operation.
Write buffer programming is allowed in any sequence. Note that the Secured Silicon sector, autoselect, and
CFI functions are unavailable when a program operation is in progress. This flash device is capable of
handling multiple write buffer programming operations on the same write buffer address range without
intervening erases. Any bit in a write buffer address range cannot be programmed from 0 back to a 1.
Attempting to do so may cause the device to set DQ5 = 1, or cause the DQ7 and DQ6 status bits to indicate
the operation was successful. However, a succeeding read shows that the data is still 0. Only erase
operations can convert a 0 to a 1.
9.5.3
Accelerated Program
The device offers accelerated program operations through the WP#/ACC pin. When the system asserts VHH
on the WP#/ACC pin, the device automatically enters the Unlock Bypass mode. The system may then write
the two-cycle Unlock Bypass program command sequence. The device uses the higher voltage on the WP#/
ACC pin to accelerate the operation. Note that the WP#/ACC pin must not be at VHH for operations other than
accelerated programming, or device damage may result. WP# has an internal pull-up; when unconnected,
WP# is at VIH.
Figure 9.2 on page 53 illustrates the algorithm for the program operation. Refer to Erase and Program
Operations on page 75 for parameters, and Figure 15.4 on page 76 for timing diagrams.
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PDF描述 |
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| S29GL256N10FFI010 | MirrorBit Flash Family |
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| S29GL256N80FFI010 | MirrorBit Flash Family |
| S29GL256N80FFI013 | MirrorBit Flash Family |
| S29JL032H90TAI223 | 2M X 16 FLASH 3V PROM, 90 ns, PDSO48 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL256N10FAI020 | 制造商:Spansion 功能描述: |
| S29GL256N10FFI010 | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 256Mbit 32M/16M x 8bit/16bit 100ns 64-Pin Fortified BGA Tray 制造商:Spansion 功能描述:MIRRORBIT FLASH 256MB SMD 29LV256 |
| S29GL256N10FFI012 | 制造商:Spansion 功能描述:Flash - NOR IC |
| S29GL256N10FFI020 | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 256Mbit 32M/16M x 8bit/16bit 100ns 64-Pin Fortified BGA Tray 制造商:Spansion 功能描述:MIRRORBIT FLASH 256MB SMD 29LV256 |
| S29GL256N10TFI010 | 功能描述:IC FLASH 制造商:cypress semiconductor corp 系列:GL-N 包裝:托盤 零件狀態(tài):在售 存儲(chǔ)器類型:非易失 存儲(chǔ)器格式:閃存 技術(shù):FLASH - NOR 存儲(chǔ)容量:256Mb （32M x 8，16M x 16） 寫周期時(shí)間 - 字，頁(yè):100ns 訪問(wèn)時(shí)間:100ns 存儲(chǔ)器接口:并聯(lián) 電壓 - 電源:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TA） 安裝類型:表面貼裝 封裝/外殼:56-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商器件封裝:56-TSOP 標(biāo)準(zhǔn)包裝:91 |
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