參數(shù)資料
型號(hào)： S29GL256N10FAI010
廠商： SPANSION LLC
元件分類： PROM
英文描述： MirrorBit Flash Family
中文描述： 16M X 16 FLASH 3V PROM, 100 ns, PBGA64
封裝： 13 X 11 MM, FBGA-64
文件頁數(shù)： 23/95頁
文件大?。?/td> 3781K
代理商： S29GL256N10FAI010
Publication Number S29GL-N_00
Revision B
Amendment 8
Issue Date May 30, 2008
This product family has been retired and is not recommended for designs. For new and current designs, S29GL128P,
S29GL256P, and S29GL512P supersede S29GL128N, S29GL256N, and S29GL512N respectively. These are the factory-
recommended migration paths. Please refer to the S29GL-P Family data sheet for specifications and ordering information.
Distinctive Characteristics
Architectural Advantages
Single Power Supply Operation
– 3 volt read, erase, and program operations
Enhanced VersatileI/O
Control
– All input levels (address, control, and DQ input levels) and outputs
are determined by voltage on VIO input. VIO range is 1.65 to VCC
Manufactured on 110 nm MirrorBit Process Technology
Secured Silicon Sector Region
– 128-word/256-byte sector for permanent, secure identification
through an 8-word/16-byte random Electronic Serial Number,
accessible through a command sequence
– May be programmed and locked at the factory or by the customer
Flexible Sector Architecture
– S29GL512N: Five hundred twelve 64 Kword (128 Kbyte) sectors
– S29GL256N: Two hundred fifty-six 64 Kword (128 Kbyte) sectors
– S29GL128N: One hundred twenty-eight 64 Kword (128 Kbyte)
sectors
Compatibility with JEDEC Standards
– Provides pinout and software compatibility for single-power supply
flash, and superior inadvertent write protection
100,000 Erase Cycles per sector typical
20-year Data Retention typical
Performance Characteristics
High Performance
– 90 ns access time (S29GL128N, S29GL256N)
– 100 ns (S29GL512N)
– 8-word/16-byte page read buffer
– 25 ns page read times
– 16-word/32-byte write buffer reduces overall programming time for
multiple-word updates
Low Power Consumption (typical values at 3.0 V, 5 MHz)
– 25 mA typical active read current;
– 50 mA typical erase/program current
– 1 A typical standby mode current
Package Options
– 56-pin TSOP
– 64-ball Fortified BGA
Software & Hardware Features
Software Features
– Program Suspend and Resume: read other sectors before
programming operation is completed
– Erase Suspend and Resume: read/program other sectors before an
erase operation is completed
– Data# polling and toggle bits provide status
– Unlock Bypass Program command reduces overall multiple-word
programming time
– CFI (Common Flash Interface) compliant: allows host system to
identify and accommodate multiple flash devices
Hardware Features
– Advanced Sector Protection
– WP#/ACC input accelerates programming time (when high voltage
is applied) for greater throughput during system production. Protects
first or last sector regardless of sector protection settings
– Hardware reset input (RESET#) resets device
– Ready/Busy# output (RY/BY#) detects program or erase cycle
completion
S29GL-N
MirrorBit
Flash Family
S29GL512N, S29GL256N, S29GL128N
512 Megabit, 256 Megabit, and 128 Megabit,
3.0 Volt-only Page Mode Flash Memory featuring
110 nm MirrorBit Process Technology
Data Sheet
Product Availability Table
Density
Init. Access
VCC
Availability
512 Mb
110 ns
Full
Now
100 ns
Full
Now
256 Mb
110 ns
Full
Now
100 ns
Full
Now
90 ns
Regulated
Now
128 Mb
110 ns
Full
Now
100 ns
Full
Now
90 ns
Regulated
Now
相關(guān)PDF資料
PDF描述
S29GL256N10FFI010 MirrorBit Flash Family
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL256N10FAI020 制造商:Spansion 功能描述:
S29GL256N10FFI010 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 256Mbit 32M/16M x 8bit/16bit 100ns 64-Pin Fortified BGA Tray 制造商:Spansion 功能描述:MIRRORBIT FLASH 256MB SMD 29LV256
S29GL256N10FFI012 制造商:Spansion 功能描述:Flash - NOR IC
S29GL256N10FFI020 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 256Mbit 32M/16M x 8bit/16bit 100ns 64-Pin Fortified BGA Tray 制造商:Spansion 功能描述:MIRRORBIT FLASH 256MB SMD 29LV256
S29GL256N10TFI010 功能描述:IC FLASH 制造商:cypress semiconductor corp 系列:GL-N 包裝:托盤 零件狀態(tài):在售 存儲(chǔ)器類型:非易失 存儲(chǔ)器格式:閃存 技術(shù):FLASH - NOR 存儲(chǔ)容量:256Mb （32M x 8，16M x 16） 寫周期時(shí)間 - 字，頁:100ns 訪問時(shí)間:100ns 存儲(chǔ)器接口:并聯(lián) 電壓 - 電源:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TA） 安裝類型:表面貼裝 封裝/外殼:56-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商器件封裝:56-TSOP 標(biāo)準(zhǔn)包裝:91
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