
S1C63466 TECHNICAL MANUAL
EPSON
113
CHAPTER 7: ELECTRICAL CHARACTERISTICS
7.5 Oscillation Characteristics
The oscillation characteristics change depending on the conditions (components used, board pattern,
etc.). Use the following characteristics as reference values.
OSC1 crystal oscillation circuit
Item
Oscillation start voltage
Oscillation stop voltage
Built-in capacitance (drain)
Frequency/voltage deviation
Frequency/IC deviation
Frequency adjustment range
Harmonic oscillation start voltage
Permitted leak resistance
Symbol
Vsta
Vstp
CD
f/V
f/IC
f/CG
Vhho
Rleak
Unit
V
pF
ppm
V
M
Max.
5
10
Typ.
14
20
Min.
1.8
-10
10
6.4
200
Condition
tsta
≤3sec (VDD)
tstp
≤10sec (VDD)
Including the parasitic capacitance inside the IC (in chip)
VDD=2.2 to 6.4V
with VDC switching
without VDC switching
CG=5 to 25pF
CG=5pF (VDD)
Between OSC1 and VSS
Unless otherwise specified:
VDD=3.0V, VSS=0V, fOSC1=32.768kHz, CG=25pF, CD=built-in, Ta=-20 to 70
°C
OSC1 CR oscillation circuit
Item
Oscillation frequency dispersion
Oscillation start voltage
Oscillation start time
Oscillation stop voltage
Symbol
fOSC1
Vsta
tsta
Vstp
Unit
%
V
mS
V
Max.
30
3
Typ.
60kHz
Min.
-30
2.2
Condition
(VDD)
VDD=2.2 to 6.4V
(VDD)
Unless otherwise specified:
VDD=3.0V, V=0V, RCR1=600k
, Ta=-20 to 70°C
OSC3 ceramic oscillation circuit
Item
Oscillation start voltage
Oscillation start time
Oscillation stop voltage
Symbol
Vsta
tsta
Vstp
Unit
V
mS
V
Max.
5
Typ.
Min.
2.2
Condition
(VDD)
VDD=2.2 to 6.4V
(VDD)
Unless otherwise specified:
VDD=3.0V, VSS=0V, Ceramic oscillator: 4MHz, CGC=CDC=30pF, Ta=-20 to 70
°C
OSC3 CR oscillation circuit
Item
Oscillation frequency dispersion
Oscillation start voltage
Oscillation start time
Oscillation stop voltage
Symbol
fOSC3
Vsta
tsta
Vstp
Unit
%
V
mS
V
Max.
25
3
Typ.
1,800kHz
Min.
-25
2.2
Condition
(VDD)
VDD=2.2 to 6.4V
(VDD)
Unless otherwise specified:
VDD=3.0V, VSS=0V, RCR2=47k
, Ta=-20 to 70°C