參數(shù)資料
型號(hào)： RC28F128P33T85
廠商： NUMONYX
元件分類(lèi)： PROM
英文描述： 8M X 16 FLASH 3V PROM, 85 ns, PBGA64
封裝： BGA-64
文件頁(yè)數(shù)： 56/96頁(yè)
文件大小： 1378K
代理商： RC28F128P33T85
Numonyx StrataFlash Embedded Memory (P33)
Datasheet
November 2007
6
Order Number: 314749-05
1.0
Introduction
This document provides information about the Numonyx StrataFlash Embedded
Memory (P33) device and describes its features, operation, and specifications.
P33 is the latest generation of Numonyx StrataFlash memory devices. Offered in
64-Mbit up through 512-Mbit densities, the P33 flash memory device brings reliable,
two-bit-per-cell storage technology to the embedded flash market segment. Benefits
include more density in less space, high-speed interface, lowest cost-per-bit NOR
device, and support for code and data storage. Features include high-performance
synchronous-burst read mode, fast asynchronous access times, low power, flexible
security options, and three industry standard package choices.
P33 product family is manufactured using Intel* 130 nm ETOX VIII process
technology. The P33 product family is also planned on the Numonyx 65nm process
lithography. 65nm AC timing changes are noted in this datasheet, and should be taken
into account for all new designs
1.1
Nomenclature
1.2
Acronyms
3.0 V :
VCC (core) and VCCQ (I/O) voltage range of 2.3 V – 3.6 V
9.0 V :
VPP voltage range of 8.5 V – 9.5 V
Block :
A group of bits, bytes, or words within the flash memory array that erase
simultaneously. The Numonyx StrataFlash Embedded Memory (P33) has two block
sizes: 32 KByte and 128 KByte.
Main block :
An array block that is usually used to store code and/or data. Main blocks are larger
than parameter blocks.
Parameter block :
An array block that may be used to store frequently changing data or small system
parameters that traditionally would be stored in EEPROM.
Top parameter device :
A device with its parameter blocks located at the highest physical address of its
memory map.
Bottom parameter device :
A device with its parameter blocks located at the lowest physical address of its
memory map.
BEFP :
Buffer Enhanced Factory Programming
CUI :
Command User Interface
MLC :
Multi-Level Cell
OTP :
One-Time Programmable
PLR :
Protection Lock Register
PR :
Protection Register
RCR :
Read Configuration Register
RFU :
Reserved for Future Use
SR :
Status Register
WSM :
Write State Machine
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