參數(shù)資料
型號： PSD4256G6
廠商： 意法半導(dǎo)體
英文描述： Current Mode PWM Controller 16-SOIC 0 to 70
中文描述： Flash在系統(tǒng)可編程ISP的周邊的16位微控制器
文件頁數(shù)： 83/100頁
文件大小： 759K
代理商： PSD4256G6
83/100
PSD4256G6V
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
Table 60. DC Characteristics
Note: 1. Reset (RESET) has hysteresis. V
IL1
is valid at or below 0.2V
CC
–0.1. V
IH1
is valid at or above 0.8V
CC
.
2. CSI deselected or internal PD is active.
3. PLD is in non-Turbo mode, and none of the inputs are switching.
4. Please see Figure 35, page 77 for the PLD current calculation.
5. I
OUT
= 0 mA
Note: 1. Conditions (in addition to those in Table 56, V
CC
= 4.5 to 5.5V): V
SS
= 0V; C
L
for Port 0, ALE and PSEN output is 100pF; C
L
for
other outputs is 80pF
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
V
IH
High Level Input Voltage
2.7V < V
CC
< 3.6V
0.7V
CC
V
CC
+0.5
V
V
IL
Low Level Input Voltage
2.7V < V
CC
< 3.6V
–0.5
0.8
V
V
IH1
RESET High Level Input Voltage
(Note
1
)
0.8V
CC
V
CC
+0.5
V
V
IL1
RESET Low Level Input Voltage
(Note
1
)
–0.5
0.2V
CC
–0.1
V
V
HYS
RESET Pin Hysteresis
0.3
V
V
LKO
V
CC
(min) for Flash Erase and
Program
1.5
2.3
V
V
OL
Output Low Voltage
I
OL
= 20 μA, V
CC
= 2.7V
0.01
0.1
V
I
OL
= 4 mA, V
CC
= 2.7V
0.15
0.45
V
V
OH
Output High Voltage Except
V
STBY
On
I
OH
= –20 μA, V
CC
= 2.7V
2.6
2.69
V
I
OH
= –1 mA, V
CC
= 2.7V
2.3
2.4
V
V
OH1
Output High Voltage V
STBY
On
I
OH1
= –1 μA
V
STBY
– 0.8
V
V
STBY
SRAM Standby Voltage
2.0
V
CC
V
I
STBY
SRAM Standby Current
V
CC
= 0V
0.5
1
μA
I
IDLE
Idle Current (V
STBY
input)
V
CC
> V
STBY
–0.1
0.1
μA
V
DF
SRAM Data Retention Voltage
Only on V
STBY
2
V
I
SB
Standby Supply Current
for Power-down Mode
CSI >V
CC
–0.3V (Notes
2,3
)
50
100
μA
I
LI
Input Leakage Current
V
SS
< V
IN
< V
CC
–1
±0.1
1
μA
I
LO
Output Leakage Current
0.45 < V
IN
< V
CC
–10
±5
10
μA
I
CC
(DC)
(Note
5
)
Operating
Supply Current
PLD Only
PLD_TURBO = Off,
f = 0 MHz (Note
3
)
0
μA/
PT
PLD_TURBO = On,
f = 0 MHz
200
400
μA/
PT
Flash memory
During Flash memory
WRITE/Erase Only
10
25
mA
Read only, f = 0 MHz
0
0
mA
SRAM
f = 0 MHz
0
0
mA
I
CC
(AC)
(Note
5
)
PLD AC Adder
note
4
Flash memory AC Adder
1.2
1.8
mA/
MHz
SRAM AC Adder
0.8
1.5
mA/
MHz
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