- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382395 > PMWD20XN (NXP SEMICONDUCTORS) Dual N-channel UTrenchMOS extremely low level FET PDF資料下載
參數(shù)資料
| 型號： | PMWD20XN |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual N-channel UTrenchMOS extremely low level FET |
| 中文描述： | 10400 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-153 |
| 封裝： | PLASTIC PACKAGE-8 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 93K |
| 代理商： | PMWD20XN |
9397 750 14721
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 26 April 2005
2 of 12
Philips Semiconductors
PMWD20XN
Dual N-channel
μ
TrenchMOS extremely low level FET
3.
Ordering information
4.
Limiting values
[1]
Single device conducting.
Table 2:
Type number
Ordering information
Package
Name
TSSOP8
Description
plastic thin shrink small outline package; 8 leads; body width 4.4 mm
Version
SOT530-1
PMWD20XN
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
DGR
drain-gate voltage (DC)
V
GS
gate-source voltage (DC)
I
D
drain current (DC)
Limiting values
Conditions
25
°
C
≤
T
j
≤
150
°
C
25
°
C
≤
T
j
≤
150
°
C; R
GS
= 20 k
Min
-
-
-
Max
20
20
±
12
10.4
6.5
41.7
4.2
+150
+150
Unit
V
V
V
A
A
A
W
°
C
°
C
T
sp
= 25
°
C; V
GS
= 4.5 V;
Figure 2
and
3
T
sp
= 100
°
C; V
GS
= 4.5 V;
Figure 2
T
sp
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
sp
= 25
°
C;
Figure 1
[1]
-
[1]
-
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
source (diode forward) current (DC)
I
SM
peak source (diode forward) current T
sp
= 25
°
C; pulsed; t
p
≤
10
μ
s
peak drain current
total power dissipation
storage temperature
junction temperature
[1]
-
[1]
-
55
55
T
sp
= 25
°
C
[1]
-
3.5
14
A
A
[1]
-
相關PDF資料 |
PDF描述 |
|---|---|
| PN2369 | NPN switching transistors |
| PN2369A | NPN switching transistors |
| PN2483 | LOW LEVEL, LOW NOISE NPN SILICON PLANAR TRANSISTORS |
| PN2905 | PNP SILICON TRANSISTORS |
| PNP3638A | PNP SILICON TRANSISTORS |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| PMWD20XN,118 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PMWD22XN | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual N-channel uTrenchMOS extremely low level FET |
| PMWD26UN | 制造商:NXP Semiconductors 功能描述:MOSFET N TSSOP-8 制造商:NXP Semiconductors 功能描述:MOSFET, N, TSSOP-8 |
| PMWD26UN,518 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PMWD26UN | 制造商:NXP Semiconductors 功能描述:MOSFET N TSSOP-8 |
發(fā)布緊急采購，3分鐘左右您將得到回復。