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參數(shù)資料
| 型號： | PMWD20XN |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual N-channel UTrenchMOS extremely low level FET |
| 中文描述： | 10400 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-153 |
| 封裝： | PLASTIC PACKAGE-8 |
| 文件頁數(shù)： | 10/12頁 |
| 文件大?。?/td> | 93K |
| 代理商： | PMWD20XN |
9397 750 14721
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 26 April 2005
10 of 12
Philips Semiconductors
PMWD20XN
Dual N-channel
μ
TrenchMOS extremely low level FET
8.
Revision history
Table 6:
Document ID
PMWD20XN_2
Modifications:
Revision history
Release date
20050426
The format of this data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors.
I
D
and P
tot
data revised in
Section 1.4 “Quick reference data”
.
I
D,
I
DM
, P
tot
, I
S
and I
SM
data revised in
Table 3 “Limiting values”
.
Figure 3
revised in
Section 4 “Limiting values”
.
R
th(j-sp)
data revised in
Table 4 “Thermal characteristics”
.
Figure 4
revised in
Section 5 “Thermal characteristics”
.
20040119
Product data
-
Data sheet status
Product data sheet
Change notice Doc. number
-
Supersedes
PMWD20XN-01
9397 750 14721
PMWD20XN-01
9397 750 12595
-
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| PMWD20XN,118 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PMWD22XN | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual N-channel uTrenchMOS extremely low level FET |
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| PMWD26UN,518 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PMWD26UN | 制造商:NXP Semiconductors 功能描述:MOSFET N TSSOP-8 |
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