參數(shù)資料
型號(hào): PIC12F635T-E/SN
元件分類: 微控制器/微處理器
英文描述: 8-BIT, FLASH, 20 MHz, RISC MICROCONTROLLER, PDSO8
封裝: 0.150 INCH, PLASTIC, MS-012, SOIC-8
文件頁(yè)數(shù): 81/196頁(yè)
文件大?。?/td> 3291K
代理商: PIC12F635T-E/SN
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2005 Microchip Technology Inc.
Preliminary
DS41232B-page 169
PIC12F635/PIC16F636/639
CTUNZ
LCZ Tuning Capacitor
44.1
0
63
81.9
pF
VDD = 3.0V,
Config. Reg. 3, bits<6:1> Setting = 000000
63 pF +/- 30%
Config. Reg. 3, bits<6:1> Setting = 111111
63 steps, 1 pF/step
Monotonic increment in capacitor value from
setting = 000000 to 111111 by design
C_Q
Q of Trimming Capacitors
50*
pF
Characterized at bench test
TDR
Demodulator Charge Time
(delay time of demodulated output
to rise)
—50
μsVDD = 3.0V
MOD depth setting = 50%
Input conditions:
Amplitude = 300 mVPP
Modulation depth = 80%
TDF
Demodulator Discharge Time
(delay time of demodulated output
to fall)
—50
μsVDD = 3.0V
MOD depth setting = 50%
Input conditions:
Amplitude = 300 mVPP
Modulation depth = 80%
TLFDATAR Rise time of LFDATA
0.5
μsVDD = 3.0V
Time is measured from 10% to 90% of
amplitude
TLFDATAF Fall time of LFDATA
0.5
μsVDD = 3.0V
Time is measured from 10% to 90% of
amplitude
TAGC
AGC stabilization time
3.5*
ms
Time required for AGC stabilization
TPAGC
High time after AGC settling time
62.5
μs
Equivalent to two Internal clock cycle (FOSC)
TSTAB
AGC stabilization time plus high
time (after AGC settling time)
(TAGC +TPAGC)
4
ms
AGC stabilization time
TGAP
Gap time after AGC settling time
200
μs
Typically 1 TE
TRDY
Time from exiting Sleep or POR to
being ready to receive signal
——
50*
ms
TPRES
Minimum time AGC level must be
held after receiving AGC Preserve
command
5*
ms
AGC level must not change more than 10%
during TPRES.
FOSC
Internal RC oscillator frequency
(±10%)
28.8
32
35.2
kHz
Internal clock trimmed at 32 kHz during test
TINACT
Inactivity timer time-out
14.4
16
17.6
ms
512 cycles of RC oscillator @ FOSC
TALARM
Alarm timer time-out
28.8
32
35.2
ms
1024 cycles of RC oscillator @ FOSC
RLC
LC Pin Input Impedance
LCX, LCY, LCZ
1*
MOhm
Device in Standby mode
15.11 AC Characteristics: Analog Front-End for PIC16F639 (industrial, extended) (Continued)
AC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Supply Voltage
2.0V
≤ VDD ≤ 3.6V
Operating temperature
-40°C
≤ TAMB ≤ +85°C for industrial
-40°C
≤ TAMB ≤ +125°C for extended
LC Signal Input
Sinusoidal 300 mVPP
Carrier Frequency
125 kHz
LCCOM connected to VSS
Param
No.
Sym.
Characteristic
Min
Typ
Max
Units
Conditions
*
Parameter is characterized but not tested.
Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested.
Note 1:
Required output enable filter high time must account for input path analog delays = TOEH - TDR + TDF
2:
Required output enable filter low time must account for input path analog delays (= TOEL + TDR - TDF)
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PIC12F635T-I/MD 功能描述:8位微控制器 -MCU 2 KB 64 RAM 6I/O RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
PIC12F635TI/MF 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:8/14-PIN FLASH-BASED, 8-BIT CMOS MICROCONTROLLERS WITH NANOWATT TECHNOLOGY
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PIC12F635TI/MFQTP 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:8/14-PIN FLASH-BASED, 8-BIT CMOS MICROCONTROLLERS WITH NANOWATT TECHNOLOGY
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