參數(shù)資料
型號： PHX18NQ20T
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel enhancement mode field-effect transistor
中文描述： 8.2 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, TO-220F, 3 PIN
文件頁數(shù)： 9/15頁
文件大小： 293K
代理商： PHX18NQ20T
Philips Semiconductors
PHX18NQ20T
N-channel FET
Product specification
Rev. 01 — 28 August 2000
9 of 15
9397 750 07452
Philips Electronics N.V. 2000. All rights reserved.
10. Package outline
Fig 15. SOT186A.
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT186A
3-lead TO-220F
0
5
10 mm
scale
Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3 lead TO-220 'full pack'
SOT186A
A
A1
Q
c
K
j
Notes
1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned.
2. Both recesses are
2.5
×
0.8 max. depth
D
D1
L
L2
L1
b1
b2
e1
e
b
w
M
1
2
3
q
E
P
T
UNIT
D
b1
D1
e
q
Q
P
L
c
L2
(1)
e1
A
5.08
3
mm
4.6
4.0
A1
2.9
2.5
b
0.9
0.7
1.1
0.9
b2
1.4
1.2
0.7
0.4
15.8
15.2
6.5
6.3
E
10.3
9.7
2.54
14.4
13.5
T
(2)
2.5
0.4
L1
3.30
2.79
j
2.7
2.3
K
0.6
0.4
2.6
2.3
3.0
2.6
w
3.2
3.0
DIMENSIONS (mm are the original dimensions)
97-06-11
99-09-13
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PHX18NQ20T,127 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHX1N40 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor
PHX1N40E 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of PHP2N40E
PHX1N50E 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version fo PHP1N50E
PHX1N60E 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of PHP1N60E
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