參數(shù)資料
型號： PHX18NQ20T
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel enhancement mode field-effect transistor
中文描述： 8.2 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, TO-220F, 3 PIN
文件頁數(shù)： 2/15頁
文件大小： 293K
代理商： PHX18NQ20T
Philips Semiconductors
PHX18NQ20T
N-channel FET
Product specification
Rev. 01 — 28 August 2000
2 of 15
9397 750 07452
Philips Electronics N.V. 2000. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Symbol Parameter
V
DS
drain-source voltage (DC)
I
D
drain current (DC)
P
tot
total power dissipation
T
j
junction temperature
R
DSon
drain-source on-state resistance
Quick reference data
Conditions
T
j
= 25 to 150
°
C
T
hs
= 25
°
C; V
GS
= 10 V
T
hs
= 25
°
C
Typ
130
Max
200
8.2
30
150
180
450
Unit
V
A
W
°
C
m
m
V
GS
= 10 V; I
D
= 8 A; T
j
= 25
o
C
V
GS
= 10 V; I
D
= 8 A; T
j
= 150
°
C
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
DGR
drain-gate voltage (DC)
V
GS
gate-source voltage (DC)
I
D
drain current (DC)
Limiting values
Conditions
T
j
= 25 to 150
°
C
T
j
= 25 to 150
°
C; R
GS
= 20 k
Min
Max
200
200
±
20
8.2
Unit
V
V
V
A
T
hs
= 25
°
C; V
GS
= 10 V;
Figure 2
and
3
T
hs
= 100
°
C; V
GS
= 10 V;
Figure 2
T
hs
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
hs
= 25
°
C;
Figure 1
5.2
33
A
A
I
DM
peak drain current
P
tot
T
stg
T
j
Source-drain diode
I
S
source (diode forward) current (DC)
I
SM
peak source (diode forward) current
total power dissipation
storage temperature
operating junction temperature
55
55
30
+150
+150
W
°
C
°
C
T
amb
= 25
°
C
T
amb
= 25
°
C; pulsed; t
p
≤
10
μ
s
8.2
33
A
A
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