參數(shù)資料
型號(hào)： PHX1N40
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： Circular Connector; Body Material:Aluminum Alloy; Series:KPT00; No. of Contacts:39; Connector Shell Size:20; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Pin RoHS Compliant: No
中文描述： 1.7 A, 400 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC PACKAGE-3
文件頁數(shù)： 1/7頁
文件大?。?/td> 60K
代理商： PHX1N40
Philips Semiconductors
Product specification
PowerMOS transistor
PHX1N40
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel
field-effect power transistor in a full
pack plastic envelope featuring high
avalanche energy capability, stable
off-state
characteristics,
switching and high thermal cycling
performance
with
resistance.
Intended
Switched
Mode
(SMPS), motor control circuits and
general
purpose
applications.
enhancement
mode
SYMBOL
PARAMETER
MAX.
UNIT
V
DS
I
D
P
tot
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state resistance
400
1.7
25
3.5
V
A
W
fast
low
for
thermal
use
Supplies
in
Power
switching
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
I
D
Continuous drain current
CONDITIONS
T
hs
= 25 C; V
GS
= 10 V
T
hs
= 100 C; V
GS
= 10 V
T
hs
= 25 C
T
hs
= 25 C
T
hs
> 25 C
MIN.
-
-
-
-
-
-
-
MAX.
1.7
1.1
7
25
0.2
±
30
100
UNIT
A
A
A
W
W/K
V
mJ
I
DM
P
D
P
D
/
T
mb
Linear derating factor
V
GS
Gate-source voltage
E
AS
Single pulse avalanche
energy
I
AS
Peak avalanche current
Pulsed drain current
Total dissipation
V
DD
≤
50 V; starting T
j
= 25C; R
GS
= 50
;
V
GS
= 10 V
V
DD
≤
50 V; starting T
j
= 25C; R
GS
= 50
;
V
GS
= 10 V
-
2.5
A
T
j
, T
stg
Operating junction and
storage temperature range
- 55
150
C
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
R.M.S. isolation voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
f = 50-60 Hz; sinusoidal
waveform;
R.H.
≤
65% ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
-
10
-
pF
1 2 3
case
d
g
s
June 1997
1
Rev 1.000
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PHX1N40E 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of PHP2N40E
PHX1N50E 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version fo PHP1N50E
PHX1N60E 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of PHP1N60E
PHX20N06T 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHX20N06T,127 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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