參數(shù)資料
型號(hào): PHX18NQ20T
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel enhancement mode field-effect transistor
中文描述: 8.2 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, TO-220F, 3 PIN
文件頁(yè)數(shù): 3/15頁(yè)
文件大?。?/td> 293K
代理商: PHX18NQ20T
Philips Semiconductors
PHX18NQ20T
N-channel FET
Product specification
Rev. 01 — 28 August 2000
3 of 15
9397 750 07452
Philips Electronics N.V. 2000. All rights reserved.
V
GS
4.5 V
Fig 1.
Normalized total power dissipation as a
function of ambient temperature.
Fig 2.
Normalized continuous drain current as a
function of ambient temperature.
T
amb
= 25
°
C; I
DM
is single pulse.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa11
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
Pder
(%)
Tmb (oC)
03aa19
0
20
40
60
80
100
120
0
25
50
75
100
125
175
Ider
(%)
Tamb (oC)
P
der
P
tot 25 C
°
)
----------------------
100
%
×
=
I
der
I
D 25 C
°
)
------------------
100
%
×
=
03ac74
10-1
1
10
102
1
10
102
103
VDS (V)
ID
(A)
RDSon = VDS / ID
D.C.
tp = 10
μ
s
100
μ
s
1 ms
10 ms
100 ms
tp
tp
T
T
P
t
δ
=
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