參數(shù)資料
型號: PHX18NQ20T
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel enhancement mode field-effect transistor
中文描述: 8.2 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, TO-220F, 3 PIN
文件頁數(shù): 1/15頁
文件大?。?/td> 293K
代理商: PHX18NQ20T
PHX18NQ20T
N-channel enhancement mode field-effect transistor
Rev. 01 — 28 August 2000
Product specification
c
c
M3D308
1.
Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS
1
technology.
Product availability:
PHX18NQ20T in SOT186A.
2.
Features
I
TrenchMOS technology
I
Low on-state resistance
I
Fast switching
I
Low thermal resistance
I
Isolated tab.
3.
Applications
I
Off-line switched mode power supplies
I
Television and computer monitor power supplies
I
DC to DC converters
I
Motor control circuits
4.
Pinning information
1.
TrenchMOS is a trademark of Royal Philips Electronics.
Table 1:
Pin
Pinning - SOT186A, simplified outline and symbol
Description
Simplified outline
Symbol
1
gate (g)
2
drain (d)
3
source (s)
Tab
isolated
1 2 3
isolated tab
03ab49
d
g
s
03ab30
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參數(shù)描述
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PHX1N40 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor
PHX1N40E 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of PHP2N40E
PHX1N50E 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version fo PHP1N50E
PHX1N60E 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of PHP1N60E