參數資料
型號: PHX18NQ20T
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel enhancement mode field-effect transistor
中文描述: 8.2 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, TO-220F, 3 PIN
文件頁數: 7/15頁
文件大?。?/td> 293K
代理商: PHX18NQ20T
Philips Semiconductors
PHX18NQ20T
N-channel FET
Product specification
Rev. 01 — 28 August 2000
7 of 15
9397 750 07452
Philips Electronics N.V. 2000. All rights reserved.
I
D
= 1 mA; V
DS
= V
GS
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
T
j
= 25
°
C; V
DS
= 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
T
j
= 25
°
C and 150
°
C; V
DS
>
I
D
×
R
DSon
Fig 11. Forward transconductance as a function of
drain current; typical values.
V
GS
= 0 V; f = 1 MHz
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03aa32
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-60
-20
20
60
100
140
Tj (oC)
180
VGS(th)
(V)
max.
typ.
min
03aa35
10-6
10-5
10-4
10-3
10-2
10-1
0
1
2
3
4
5
max
typ
min
VGS (V)
ID
(A)
03ac76
0
5
10
15
20
25
0
2
4
6
8
10
12
14
16
18
20
ID (A)
150 oC
Tj = 25 oC
VDS > ID X RDSon
gfs
(S)
03ac78
10
102
103
104
10-1
1
10
102
VDS (V)
Ciss, Coss,
Crss (pF)
Crss
Coss
Ciss
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