參數(shù)資料
型號： PHX1N50E
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： Circular Connector; Body Material:Aluminum Alloy; Series:KPT00; No. of Contacts:41; Connector Shell Size:20; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Pin RoHS Compliant: No
中文描述： 1.4 A, 500 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù)： 1/5頁
文件大?。?/td> 24K
代理商： PHX1N50E
Philips Semiconductors
Objective Specification
PowerMOS transistor
Isolated version fo PHP1N50E
PHX1N50E
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel
field-effect power transistor in a full
pack, plastic envelope featuring high
avalanche energy capability, stable
blocking voltage, fast switching and
high thermal cycling performance
withlowthermalresistance.Intended
for use in Switched Mode Power
Supplies
(SMPS),
circuits
and
general
switching applications.
enhancement
mode
SYMBOL
PARAMETER
MAX.
UNIT
V
DS
I
D
P
tot
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state resistance
500
1.4
25
5
V
A
W
motor
control
purpose
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DS
Drain-source voltage
V
DGR
Drain-gate voltage
±
V
GS
Gate-source voltage
I
D
Drain current (DC)
CONDITIONS
MIN.
-
-
-
-
-
-
MAX.
500
500
30
1.4
0.9
5.6
UNIT
V
V
V
A
A
A
R
GS
= 20 k
T
hs
= 25 C
T
hs
= 100 C
T
hs
= 25 C
I
DM
Drain current (pulse peak
value)
Source-drain diode current
(DC)
Source-drain diode current
(pulse peak value)
Total power dissipation
Storage temperature
Junction temperature
I
DR
T
hs
= 25 C
-
1.4
A
I
DRM
T
hs
= 25 C
-
5.6
A
P
tot
T
stg
T
j
T
hs
= 25 C
-
25
150
150
W
C
C
-55
-
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER
W
DSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
I
D
= 2 A ; V
DD
≤
50 V ; V
GS
= 10 V ;
R
GS
= 50
MIN.
MAX.
UNIT
T
= 25C prior to surge
T
= 100C prior to surge
-
-
-
120
20
3.6
mJ
mJ
mJ
W
DSR
1
Drain-source repetitive
unclamped inductive turn-off
energy
I
D
= 2 A ; V
DD
≤
50 V ; V
GS
= 10 V ;
R
GS
= 50
j
≤
150 C
1. Pulse width and frequency limited by T
j(max)
1 2 3
case
d
g
s
November 1996
1
Rev 1.000
相關(guān)PDF資料
PDF描述
PHX1N60E Circular Connector; Body Material:Aluminum Alloy; Series:KPT00; No. of Contacts:41; Connector Shell Size:20; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket RoHS Compliant: No
PHX23NQ10T N-channel TrenchMOS transistor
PHX2N40E Circular Connector; Body Material:Aluminum Alloy; Series:KPT00; No. of Contacts:21; Connector Shell Size:22; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Pin RoHS Compliant: No
PHX2N50E PowerMOS transistors Avalanche energy rated
PHX2N60E PowerMOS transistors Avalanche energy rated
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PHX1N60E 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of PHP1N60E
PHX20N06T 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHX20N06T,127 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHX23NQ10T 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS transistor
PHX23NQ10T,127 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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