參數(shù)資料
型號: PHP32N06L
廠商: NXP Semiconductors N.V.
英文描述: N-channel enhancement mode field effect transistor
中文描述: N溝道增強(qiáng)型場效應(yīng)管
文件頁數(shù): 7/13頁
文件大?。?/td> 274K
代理商: PHP32N06L
Philips Semiconductors
PHP32N06LT; PHB32N06LT
N-channel enhancement mode field effect transistor
Product data
Rev. 01 — 06 November 2001
7 of 13
9397 750 09024
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
I
D
= 1 mA; V
DS
= V
GS
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
T
j
= 25
°
C; V
DS
= V
GS
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
V
GS
= 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
03aa33
0
0.5
1
1.5
2
2.5
-60
0
60
120
180
T
j
(
o
C)
V
GS(th)
(V)
max
typ
min
03aa36
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
I
D
(A)
0
0.5
1
1.5
2
2.5
3
V
GS
(V)
max
typ
min
03ah53
10
102
103
104
10-1
1
10
102
V
DS
(V)
C
(pF)
C
iss
C
oss
C
rss
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