參數(shù)資料
型號(hào)： PHP32N06L
廠商： NXP Semiconductors N.V.
英文描述： N-channel enhancement mode field effect transistor
中文描述： N溝道增強(qiáng)型場(chǎng)效應(yīng)管
文件頁(yè)數(shù)： 6/13頁(yè)
文件大?。?/td> 274K
代理商： PHP32N06L
Philips Semiconductors
PHP32N06LT; PHB32N06LT
N-channel enhancement mode field effect transistor
Product data
Rev. 01 — 06 November 2001
6 of 13
9397 750 09024
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Source-drain diode
V
SD
source-drain (diode forward) voltage I
S
= 25 A; V
GS
= 0 V;
Figure 12
t
rr
reverse recovery time
Q
r
recovered charge
-
-
-
1
36
70
1.2
-
-
V
ns
nC
I
S
= 20 A; dI
S
/dt =
100 A/
μ
s
V
GS
=
10 V; V
DS
= 30 V
Table 5:
T
j
= 25
°
C unless otherwise specified
Symbol Parameter
Characteristics
…continued
Conditions
Min
Typ
Max
Unit
T
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C and 175
°
C; V
DS
> I
D
x R
DSon
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 5.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ah49
0
10
20
30
40
0
0.5
1
1.5
2
V
DS
(V)
I
D
(A)
4 V
5 V
T
j
= 25 oC
V
GS
= 2.5 V
10 V
3.5 V
3 V
03ah51
0
10
20
30
40
0
1
2
3
4
V
GS
(V)
I
D
(A)
V
DS
> I
D
x R
DSon
T
j
= 25 oC
175 oC
03ah50
0.02
0.03
0.04
0.05
0
10
20
30
40
I
D
(A)
R
DSon
(
)
4V
T
j
= 25 oC
5 V
10 V
V
GS
= 3.5 V
03af18
0
0.4
0.8
1.2
1.6
2
-60
0
60
120
180
T
j
(oC)
a
a
R
DSon 25 C
°
)
---------------------------
=
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參數(shù)描述
PHP32N06LT 功能描述:MOSFET RAIL MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHP32N06LT,127 功能描述:MOSFET RAIL MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHP33N10 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:PowerMOS transistor
PHP33N10/B 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:TRANSISTOR UNIVERSAL MOSFET SOT
PHP33NQ20T 功能描述:MOSFET TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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