- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382392 > PHP3N20L (NXP SEMICONDUCTORS) PowerMOS transistor Logic level FET PDF資料下載
參數(shù)資料
| 型號： | PHP3N20L |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor Logic level FET |
| 中文描述： | 3.5 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 53K |
| 代理商： | PHP3N20L |
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level FET
PHP3N20L
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode logic
level field-effect power transistor in a
plastic
envelope
avalanche energy capability, stable
blocking voltage, fast switching and
high thermal cycling performance
withlowthermalresistance.Intended
for use in Switched Mode Power
Supplies
(SMPS),
circuits
and
general
switching applications.
SYMBOL
PARAMETER
MAX.
UNIT
featuring
high
V
DS
I
D
P
tot
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state resistance
200
3.5
50
1.5
V
A
W
motor
control
purpose
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
I
D
Continuous drain current
CONDITIONS
T
mb
= 25 C; V
GS
= 10 V
T
mb
= 100 C; V
GS
= 10 V
T
mb
= 25 C
T
mb
= 25 C
T
mb
> 25 C
MIN.
-
-
-
-
-
-
-
MAX.
3.5
2.5
14
50
0.33
±
15
±
20
UNIT
A
A
A
W
W/K
V
V
I
DM
P
D
P
D
/
T
mb
Linear derating factor
V
GS
Gate-source voltage
V
GSM
Non-repetitive gate-source
voltage
E
AS
Single pulse avalanche
energy
I
AS
Peak avalanche current
Pulsed drain current
Total dissipation
t
p
≤
50
μ
s
V
DD
≤
50 V; starting T
j
= 25C; R
GS
= 50
;
V
GS
= 5 V
V
DD
≤
50 V; starting T
j
= 25C; R
GS
= 50
;
V
GS
= 5 V
-
25
mJ
-
3.5
A
T
j
, T
stg
Operating junction and
storage temperature range
- 55
175
C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
TYP.
-
MAX.
3
UNIT
K/W
R
th j-a
60
-
K/W
1 2 3
tab
d
g
s
September 1997
1
Rev 1.000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PHP45N03LT | TrenchMOS transistor Logic level FET |
| PHP45N03LTA | N-channel enhancement mode field-effect transistor |
| PHP45NQ15T | N-channel TrenchMOS standard level FET |
| PHP47NQ10T | N-channel enhancement mode field-effect transistor |
| PHP4N50E | PowerMOS transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHP3N40E | 制造商:NXP Semiconductors 功能描述:MOSFET N TO-220AB |
| PHP3N40E/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR MOSFET TO-220 |
| PHP3N50 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
| PHP3N50E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
| PHP3N60 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MOSFET POWER TRANSISTOR 600V 4.8A 125W TO-220AB(51.69 k) |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。