參數(shù)資料
型號(hào): PHN103
廠商: NXP SEMICONDUCTORS
元件分類(lèi): 小信號(hào)晶體管
英文描述: N-channel enhancement mode MOS transistor
中文描述: 8500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
封裝: PLASTIC, SO-8
文件頁(yè)數(shù): 8/12頁(yè)
文件大小: 76K
代理商: PHN103
1997 Jun 20
8
Philips Semiconductors
Product specification
N-channel enhancement mode
MOS transistor
PHN103
Fig.10 Source current as a function of source-drain
diode forward voltage; typical values.
V
GD
= 0.
(1) T
j
= 150
°
C.
(2) T
j
= 25
°
C.
(3) T
j
=
65
°
C.
handbook, halfpage
(A)
0
0.4
0.8
1.2
0
16
12
8
4
MGG336
VSD (V)
(1)
(2)
(3)
Fig.11 Drain-source on-state resistance as a
function of gate-source voltage;
typical values.
handbook, halfpage
10
0
2
4
6
8
3
10
2
10
MGG337
RDSon
(m
)
VGS (V)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
V
DS
I
D
×
R
DSon
; T
j
= 25
°
C.
(1) I
D
= 0.1 A.
(2) I
D
= 0.5 A.
(3) I
D
= 1.0 A.
(4) I
D
= 2.75 A.
(5) I
D
= 5.5 A.
(6) I
D
= 8.5 A.
(7) I
D
= 10 A.
(8) I
D
= 12 A.
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