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參數(shù)資料
| 型號(hào)： | PHN103 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | N-channel enhancement mode MOS transistor |
| 中文描述： | 8500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SO-8 |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 76K |
| 代理商： | PHN103 |
1997 Jun 20
2
Philips Semiconductors
Product specification
N-channel enhancement mode
MOS transistor
PHN103
FEATURES
High-speed switching
No secondary breakdown
Very low on-state resistance.
APPLICATIONS
Motor and actuator driver
Power management
Synchronized rectification.
DESCRIPTION
N-channel enhancement mode MOS transistor in an 8-pin
plastic SOT96-1 (SO8) package.
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
PINNING - SOT96-1 (SO8)
PIN
SYMBOL
DESCRIPTION
1
2
3
4
5
6
7
8
n.c
s
s
g
d
d
d
d
not connected
source
source
gate
drain
drain
drain
drain
Fig.1 Simplified outline and symbol.
handbook, halfpage
MAM116
1
4
5
8
s
d
n.c.
g
s
d
d
d
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
V
SD
V
GS
V
GSth
I
D
R
DSon
P
tot
drain-source voltage (DC)
source-drain diode forward voltage
gate-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
total power dissipation
1
30
1
±
20
2.8
8.5
0.03
4
V
V
V
V
A
W
I
S
= 1.25 A
I
D
= 1 mA; V
DS
= V
GS
T
s
= 80
°
C
I
D
= 5.5 A; V
GS
= 10 V
T
s
= 80
°
C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHN103S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 25V V(BR)DSS | 6A I(D) | SO |
| PHN103T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 8.6A I(D) | SO |
| PHN103T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | SO |
| PHN110 | 制造商:NXP Semiconductors 功能描述:MOSFET N SO-8 |
| PHN110T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 4A I(D) | SO |
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