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參數(shù)資料
| 型號： | PHN103 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-channel enhancement mode MOS transistor |
| 中文描述： | 8500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SO-8 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 76K |
| 代理商： | PHN103 |
1997 Jun 20
3
Philips Semiconductors
Product specification
N-channel enhancement mode
MOS transistor
PHN103
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1.
2.
3.
4.
T
s
is the temperature at the soldering point of the drain lead.
Pulse width and duty cycle limited by maximum junction temperature.
Device mounted on printed-circuit board with an R
th a-tp
(ambient to tie-point) of 27.5 K/W.
Device mounted on printed-circuit board with an R
th a-tp
(ambient to tie-point) of 90 K/W.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
V
GS
I
D
I
DM
P
tot
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
65
65
30
±
20
8.5
35
4
2.7
1.15
+150
+150
V
V
A
A
W
W
W
°
C
°
C
T
s
= 80
°
C; note 1
note 2
T
s
= 80
°
C
T
amb
= 25
°
C; note 3
T
amb
= 25
°
C; note 4
T
stg
T
j
storage temperature
operating junction temperature
Source-drain diode
I
S
I
SM
source current (DC)
peak pulsed source current
T
s
= 80
°
C
note 2
5
20
A
A
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
17.5
K/W
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相關代理商/技術參數(shù) |
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|---|---|
| PHN103S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 25V V(BR)DSS | 6A I(D) | SO |
| PHN103T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 8.6A I(D) | SO |
| PHN103T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | SO |
| PHN110 | 制造商:NXP Semiconductors 功能描述:MOSFET N SO-8 |
| PHN110T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 4A I(D) | SO |
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