參數(shù)資料
型號: PHD24N03
廠商: NXP Semiconductors N.V.
英文描述: TrenchMOS transistor Logic level FET
中文描述: TrenchMOS晶體管邏輯電平場效應管
文件頁數(shù): 6/8頁
文件大小: 50K
代理商: PHD24N03
Philips Semiconductors
Preliminary specification
TrenchMOS
transistor
Logic level FET
PHD24N03LT
MECHANICAL DATA
Fig.15. SOT428 surface mounting package. Centre pin connected to mounting base.
Notes
1. This product is supplied in anti-static packaging. The gate-source input must be protected against static
discharge during transport or handling.
2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18.
3. Epoxy meets UL94 V0 at 1/8".
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT428
98-04-07
0
10
20 mm
scale
Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads
(one lead cropped)
SOT428
E
b2
D1
w
A
M
b
c
b1
L1
L
1
3
2
D
E1
HE
L2
Note
1. Measured from heatsink back to lead.
e1
e
A
A2
A
A1
y
seating plane
mounting
base
A1
(1)
D
max.
b
D1
E
max.
HE
max.
w
y
max.
A2
b2
b1
max.
c
E1
min.
e
e1
L1
L2
L
A
max.
UNIT
DIMENSIONS (mm are the original dimensions)
0.2
0.2
mm
2.38
2.22
0.65
0.45
0.89
0.89
0.71
1.1
0.9
5.36
0.4
0.2
6.22
4.81
4.45
2.285
4.57
10.4
9.6
0.5
0.7
0.5
6.73
4.0
2.95
December 1999
6
Rev 1.100
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