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參數(shù)資料
| 型號： | PHD24N03 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | TrenchMOS transistor Logic level FET |
| 中文描述： | TrenchMOS晶體管邏輯電平場效應(yīng)管 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 50K |
| 代理商： | PHD24N03 |
Philips Semiconductors
Preliminary specification
TrenchMOS
transistor
Logic level FET
PHD24N03LT
ELECTRICAL CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA;
MIN.
30
27
1.0
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
-
-
1.5
2.0
-
-
-
2.3
50
56
45
50
-
104
10
100
0.05
10
-
500
7
-
2.3
-
5
-
12
-
50
-
30
-
36
-
3.5
-
7.5
-
V
V
V
V
V
T
j
= -55C
V
DS
= V
GS
; I
D
= 1 mA
T
j
= 175C
T
j
= -55C
R
DS(ON)
Drain-source on-state
resistance
V
GS
= 10 V; I
= 12 A
V
GS
= 5 V; I
D
= 12 A
m
m
m
nA
μ
A
μ
A
nC
nC
nC
ns
ns
ns
ns
nH
nH
T
j
= 175C
I
GSS
I
DSS
Gate source leakage current V
GS
=
±
5 V; V
DS
= 0 V
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal source inductance
V
DS
= 30 V; V
GS
= 0 V;
T
j
= 175C
Q
g(tot)
Q
gs
Q
gd
t
d on
t
r
t
d off
t
f
L
d
L
s
I
D
= 24 A; V
DD
= 15 V; V
GS
= 5 V
V
DD
= 15 V; R
= 0.6
;
V
= 5 V; R
= 10
Resistive load
Measured from tab to centre of die
Measured from source lead to source
bond pad
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Feedback capacitance
-
-
-
460
144
78
-
-
-
pF
pF
pF
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL PARAMETER
I
S
Continuous source current
(body diode)
I
SM
Pulsed source current (body
diode)
V
SD
Diode forward voltage
t
rr
Reverse recovery time
Q
rr
Reverse recovery charge
CONDITIONS
MIN.
-
TYP. MAX. UNIT
-
24
A
-
-
96
A
I
F
= 24 A; V
GS
= 0 V
I
F
= 12 A; -dI
F
/dt = 100 A/
μ
s;
V
GS
= 0 V; V
R
= 30 V
-
-
-
1.05
50
100
1.5
-
-
V
ns
nC
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER
W
DSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
I
D
= 12 A; V
≤
15 V; V
GS
= 5 V;
R
GS
= 50
; T
mb
= 25 C
MIN.
-
MAX.
15
UNIT
mJ
December 1999
2
Rev 1.100
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