參數(shù)資料
型號(hào): PHD24N03
廠商: NXP Semiconductors N.V.
英文描述: TrenchMOS transistor Logic level FET
中文描述: TrenchMOS晶體管邏輯電平場(chǎng)效應(yīng)管
文件頁(yè)數(shù): 3/8頁(yè)
文件大小: 50K
代理商: PHD24N03
Philips Semiconductors
Preliminary specification
TrenchMOS
transistor
Logic level FET
PHD24N03LT
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
mb
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
mb
); conditions: V
GS
5 V
Fig.3. Safe operating area. T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics, T
j
= 25 C
.
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 C
.
R
DS(ON)
= f(I
D
); parameter V
GS
0
20
40
60
80
Tmb / C
100
120
140
160
180
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1us
10us 100us
1ms
10ms
0.1s
1s
10s
0.01
0.1
1
10
0
0.2
0.1
0.05
0.02
0.5
PHP24N03T
pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
D =
t
p
t
p
T
T
P
t
D
D =
0
20
40
60
80
Tmb / C
100
120
140
160
180
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0
5
10
15
20
25
30
0
5
10
15
20
VGS = 2.5 V
3 V
3.5 V
PHP24N03LT
VDS, Drain-Source voltage (Volts)
ID, Drain current (Amps)
5 V
15 V
Tj = 25 C
1
10
100
1
10
100
PHP24N03T
VDS, Drain-source voltage (Volts)
ID, Drain current (Amps)
RDSON =VDSID
100 us
1 ms
10 ms
DC
10 us
Tmb = 25 C
0
5
10
15
20
0
0.02
0.04
0.06
0.08
0.1
0.12
PHP24N03LT
ID, Drain current (Amps)
RDS(on), Drain-Source on resistance (Ohms)
VGS = 2.5 V
3 V
3.5 V
5 V
15 V
Tj = 25 C
December 1999
3
Rev 1.100
相關(guān)PDF資料
PDF描述
PHD3055E PowerMOS transistor
PHD3055L PowerMOS transistor Logic level FET
PHD3N20E PowerMOS transistor
PHD3N20L PowerMOS transistor Logic level FET
PHD95N03LT N-channel enhancement mode field-effect transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PHD24N03LT 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Logic level FET
PHD27NQ10T 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS transistor
PHD2N50E 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated
PHD2N60E 制造商:NXP Semiconductors 功能描述:MOSFET N D-PAK
PHD3055E 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS transistor