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參數(shù)資料
| 型號(hào)： | PHD3055E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor |
| 中文描述： | 10.3 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | PLASTIC, SC-63, DPAK-3 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 72K |
| 代理商： | PHD3055E |
Philips Semiconductors
Product specification
PowerMOS transistor
PHD3055E
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel
field-effect power transistor in a
plastic envelope suitable for surface
mounting featuring high avalanche
energy capability, stable blocking
voltage, fast switching and high
thermalcyclingperformancewithlow
thermal resistance. Intended for use
in Switched Mode Power Supplies
(SMPS), motor control circuits and
general
purpose
applications.
enhancement
mode
SYMBOL
PARAMETER
MAX.
UNIT
V
DS
I
D
P
tot
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state resistance
60
12
50
0.15
V
A
W
switching
PINNING - SOT428
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
I
D
Continuous drain current
CONDITIONS
T
mb
= 25 C; V
GS
= 10 V
T
mb
= 100 C; V
GS
= 10 V
T
mb
= 25 C
T
mb
= 25 C
T
mb
> 25 C
MIN.
-
-
-
-
-
-
-
MAX.
12
9
48
50
0.33
±
30
25
UNIT
A
A
A
W
W/K
V
mJ
I
DM
P
D
P
D
/
T
mb
Linear derating factor
V
GS
Gate-source voltage
E
AS
Single pulse avalanche
energy
I
AS
Peak avalanche current
Pulsed drain current
Total dissipation
V
DD
≤
50 V; starting T
j
= 25C; R
GS
= 50
;
V
GS
= 10 V
V
DD
≤
50 V; starting T
j
= 25C; R
GS
= 50
;
V
GS
= 10 V
-
6
A
T
j
, T
stg
Operating junction and
storage temperature range
- 55
175
C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
TYP.
-
MAX.
3
UNIT
K/W
R
th j-a
pcb mounted, minimum
footprint
50
-
K/W
1
2
3
tab
d
g
s
September 1997
1
Rev 1.000
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|---|---|
| PHD3055E,118 | 功能描述:MOSFET N-CH TRNCH 60V 10.3A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHD3055L | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET |
| PHD32UAA | 制造商:POWER-ONE 制造商全稱:Power-One 功能描述:PHD32 Series . 32A Non-Isolated DC/DC Converter 5V, 3.3V Input Dual Output |
| PHD32UAY | 制造商:POWER-ONE 制造商全稱:Power-One 功能描述:PHD32 Series . 32A Non-Isolated DC/DC Converter 5V, 3.3V Input Dual Output |
| PHD32UBA | 制造商:POWER-ONE 制造商全稱:Power-One 功能描述:PHD32 Series . 32A Non-Isolated DC/DC Converter 5V, 3.3V Input Dual Output |
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