參數(shù)資料
型號(hào): PHD14NQ20T
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: TrenchMOS standard level FET
中文描述: 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝: PLASTIC, SC-63, DPAK-3
文件頁(yè)數(shù): 7/14頁(yè)
文件大?。?/td> 269K
代理商: PHD14NQ20T
Philips Semiconductors
PHP/PHB/PHD14NQ20T
TrenchMOS standard level FET
Product data
Rev. 03 — 11 March 2002
7 of 14
9397 750 09535
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
I
D
= 1 mA; V
DS
= V
GS
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
T
j
= 25
°
C; V
DS
= 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
V
GS
= 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
T
j
= 25
°
C and 175
°
C; V
GS
= 0 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
003aaa226
5
4
3
2
1
0
-100
0
100
200
Tj (
ο
C)
VGS(th)
(V)
max
typ
min
03aa35
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
I
D
(A)
0
2
4
6
V
GS
(V)
max
typ
min
10
102
103
104
C
(pF)
VDS (V)
0
10
20
30
40
Ciss
Crss
Coss
003aaa227
1.2
0
0.4
0.8
30
20
10
0
IS
(A)
VSD (V)
Tj = 175
ο
C
Tj = 25
ο
C
003aaa229
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