參數(shù)資料
型號(hào): PHD14NQ20T
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: TrenchMOS standard level FET
中文描述: 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝: PLASTIC, SC-63, DPAK-3
文件頁(yè)數(shù): 6/14頁(yè)
文件大?。?/td> 269K
代理商: PHD14NQ20T
Philips Semiconductors
PHP/PHB/PHD14NQ20T
TrenchMOS standard level FET
Product data
Rev. 03 — 11 March 2002
6 of 14
9397 750 09535
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
T
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C and 175
°
C; V
DS
>
I
D
×
R
DSon
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 5.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain source on-state resistance
factor as a function of junction temperature.
6 V
5 V
VGS = 10 V
5.5 V
4.5 V
30
20
10
0
ID
(A)
10
8
6
4
2
0
VDS (V)
003aaa221
8
16
24
0
30
0
2
4
6
8
ID
(A)
Tj = 25
ο
C
Tj = 175
ο
C
VGS (V)
003aaa223
20
0
10
5
15
ID (A)
RDSon
(
)
0.8
0.6
0.4
0.2
0
VGS = 10 V
6 V
4.5 V
5 V
5.5 V
003aaa222
180
-60
1
1.5
2
2.5
3
0.5
20
100
a
Tj (
ο
C)
003aaa225
a
R
R
DSon 25
°
C
)
-----------------------------
=
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