參數(shù)資料
型號： PHC20512
廠商： NXP SEMICONDUCTORS
元件分類： 小信號晶體管
英文描述： Complementary enhancement mode MOS transistors
中文描述： 6400 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
封裝： SO-8
文件頁數(shù)： 6/20頁
文件大小： 158K
代理商： PHC20512
1997 Oct 22
6
Philips Semiconductors
Product specification
Complementary enhancement mode
MOS transistors
PHC20512
Q
GD
gate-drain charge
N-channel
P-channel
turn-on delay time
N-channel
V
GS
= 10 V; V
DD
= 15 V; I
D
= 3.2 A
V
GS
=
10 V; V
DD
=
15 V; I
D
=
2 A
5
4
nC
nC
t
d(on)
V
GS
= 0 to 10 V; V
DD
= 15 V; I
D
= 1 A;
R
gen
= 6
V
GS
= 0 to
10 V; V
DD
=
15 V;
I
D
=
1 A; R
gen
= 6
7
ns
P-channel
6
ns
t
d(off)
turn-off delay time
N-channel
V
GS
= 10 to 0 V; V
DD
= 15 V;
I
D
= 1 A; R
gen
= 6
V
GS
=
10 to 0 V; V
DD
=
15 V;
I
D
=
1 A; R
gen
= 6
20
ns
P-channel
29
ns
t
f
fall time
N-channel
V
GS
= 0 to 10 V; V
DD
= 15 V; I
D
= 1 A;
R
gen
= 6
V
GS
=
10 to 0 V; V
DD
=
15 V;
I
D
=
1 A; R
gen
= 6
8
ns
P-channel
16
ns
t
r
rise time
N-channel
V
GS
= 10 to 0 V; V
DD
= 15 V; I
D
= 1 A;
R
gen
= 6
V
GS
= 0 to
10 V; V
DD
=
15 V;
I
D
=
1 A; R
gen
= 6
12
ns
P-channel
4
ns
t
on
turn-on switching time
N-channel
V
GS
= 0 to 10 V; V
DD
= 15 V; I
D
= 1 A;
R
gen
= 6
V
GS
= 0 to
10 V; V
DD
=
15 V;
I
D
=
1 A; R
gen
= 6
15
ns
P-channel
10
ns
t
off
turn-off switching time
N-channel
V
GS
= 10 to 0 V; V
DD
= 15 V;
I
D
= 1 A; R
gen
= 6
V
GS
=
10 to 0 V; V
DD
=
15 V;
I
D
=
1 A; R
gen
= 6
32
ns
P-channel
45
ns
Source-drain diode
V
SD
source-drain diode forward
voltage
N-channel
P-channel
reverse recovery time
N-channel
P-channel
V
GD
= 0; I
S
= 1.25 A
V
GD
= 0; I
S
=
1.25 A
1
1.3
V
V
t
rr
I
S
= 1.25 A; di/dt =
100 A/
μ
s
I
S
=
1.25 A; di/dt = 100 A/
μ
s
45
75
ns
ns
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
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