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參數(shù)資料
| 型號： | PHC20512 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Complementary enhancement mode MOS transistors |
| 中文描述： | 6400 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 3/20頁 |
| 文件大小： | 158K |
| 代理商： | PHC20512 |
1997 Oct 22
3
Philips Semiconductors
Product specification
Complementary enhancement mode
MOS transistors
PHC20512
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1.
2.
3.
4.
T
s
is the temperature at the soldering point of the drain lead.
Pulse width and duty cycle limited by maximum junction temperature.
Maximum permissible dissipation per MOS transistor. Both devices may be loaded up to 3.5 W at the same time.
Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with an R
th a-tp
(ambient to tie-point) of 27.5 K/W.
Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with an R
th a-tp
(ambient to tie-point) of 90 K/W.
Maximum permissible dissipation if only one MOS transistor dissipates. Device mounted on printed-circuit board with
an R
th a-tp
(ambient to tie-point) of 90 K/W.
5.
6.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per channel
V
DS
drain-source voltage (DC)
N-channel
P-channel
gate-source voltage (DC)
drain current (DC)
N-channel
P-channel
peak drain current
N-channel
P-channel
total power dissipation
30
30
±
20
V
V
V
V
GS
I
D
T
s
= 80
°
C; note 1
6.4
4
A
A
I
DM
note 2
65
65
25
16
3.5
2.6
1.1
1.5
+150
+150
A
A
W
W
W
W
°
C
°
C
P
tot
T
s
= 80
°
C; note 3
T
amb
= 25
°
C; note 4
T
amb
= 25
°
C; note 5
T
amb
= 25
°
C; note 6
T
stg
T
j
storage temperature
operating junction temperature
Source-drain diode
I
S
source current (DC)
N-channel
P-channel
peak pulsed source current
N-channel
P-channel
T
s
= 80
°
C
3.5
2.6
A
A
I
SM
note 2
14
10
A
A
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