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參數(shù)資料
| 型號(hào)： | PH3230 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 50 A, 30 V, 0.0073 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235 |
| 封裝： | PLASTIC, LFPAK-5 |
| 文件頁數(shù)： | 9/13頁 |
| 文件大?。?/td> | 255K |
| 代理商： | PH3230 |
Philips Semiconductors
PH3230
N-channel enhancement mode field-effect transistor
Product data
Rev. 03 — 25 June 2003
9 of 13
9397 750 10949
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9.
Test information
T
j
= 25
°
C and 150
°
C; V
GS
= 0 V
Fig 14. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
T
j
= 25
°
C; I
D
= 50 A; V
DD
= 10 V
Fig 15. Gate-source voltage as a function of gate
charge; typical values.
03ag82
0
20
40
60
80
100
I
S
(A)
0
0.4
0.8
1.2
1.6
V
SD
(V)
T
j
= 25
°
C
150
°
C
V
GS
= 0 V
03ag84
0
2
4
6
8
10
VGS
(V)
0
20
40
60
80
QG (nC)
ID = 50 A
VDD = 10 V
Tj = 25
°
C
Fig 16. Avalanche energy test circuit.
03am60
50
R01
shunt
VGS
VDS
RG
T.U.T.
VDD
ID/100
0
L
E
DS AL
)
R
0.5
LI
DS AL
)
R
(
)
×
2
V
BR
(
)
DSS
DD
---------------------------------------
×
=
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