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參數(shù)資料
| 型號： | PH3230 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 50 A, 30 V, 0.0073 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235 |
| 封裝： | PLASTIC, LFPAK-5 |
| 文件頁數(shù)： | 2/13頁 |
| 文件大?。?/td> | 255K |
| 代理商： | PH3230 |
Philips Semiconductors
PH3230
N-channel enhancement mode field-effect transistor
Product data
Rev. 03 — 25 June 2003
2 of 13
9397 750 10949
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Symbol Parameter
V
DS
drain-source voltage (DC)
I
D
drain current (DC)
P
tot
total power dissipation
T
j
junction temperature
R
DSon
drain-source on-state resistance
Quick reference data
Conditions
T
j
= 25
°
C
T
mb
= 25
°
C
T
mb
= 25
°
C
Typ
-
-
-
-
3.2
5.5
Max
30
50
42
150
3.7
7.3
Unit
V
A
W
°
C
m
m
V
GS
= 10 V; I
D
= 25 A; T
j
= 25
°
C
V
GS
= 4.5 V; I
D
= 25 A; T
j
= 25
°
C
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
GS
gate-source voltage (DC)
I
D
drain current (DC)
I
DM
peak drain current
P
tot
total power dissipation
T
stg
storage temperature
T
j
junction temperature
Source-drain diode
I
SM
peak source (diode forward) current T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s
Avalanche ruggedness
I
DS(AL)R
repetitive drain-source avalanche
current
E
DS(AL)R
repetitive drain-source avalanche
energy
Limiting values
Conditions
25
°
C
≤
T
j
≤
150
°
C
Min
-
-
-
-
-
55
55
Max
30
±
20
50
200
42
+150
+150
Unit
V
V
A
A
W
°
C
°
C
V
GS
= 10 V; T
mb
= 25
°
C;
Figure 2
and
4
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 4
T
mb
= 25
°
C;
Figure 1
-
50
A
T
j
= 25
°
C
-
5
A
T
j
= 25
°
C; R
GS
≥
50
; I
DS(AL)R
= 5 A;
V
DD
= 15 V; duty cycle < 0.1%;
Figure 3
and
16
-
2.5
mJ
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