參數(shù)資料
型號(hào): PH3230
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel enhancement mode field-effect transistor
中文描述: 50 A, 30 V, 0.0073 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235
封裝: PLASTIC, LFPAK-5
文件頁數(shù): 1/13頁
文件大小: 255K
代理商: PH3230
PH3230
N-channel enhancement mode field-effect transistor
Rev. 03 — 25 June 2003
Product data
M3D748
1.
Description
The latest generation N-channel enhancement mode field-effect power transistor in a
SOT669 (LFPAK) package.
Product availability:
PH3230 in SOT669 (LFPAK).
2.
Features
I
Logic level compatible
I
Low drive current
I
High density mounting
I
Very low on-state resistance.
3.
Applications
I
DC-to-DC converters
I
Computer motherboards
I
Switched mode power supplies.
4.
Pinning information
Table 1:
Pin
Pinning - SOT669 (LFPAK), simplified outline and symbol
Description
Simplified outline
Symbol
1,2,3
source (s)
SOT669 (LFPAK)
4
gate (g)
mb
mounting base,
connected to
drain (d)
1
Top view
MBL286
2
3
mb
4
MBL288
d
s1 s2 s3
g
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PH3-230/095-22G 制造商:FCI 功能描述:
PH3-230/095-36G 制造商:FCI 功能描述:
PH3230CL,115 制造商:NXP Semiconductors 功能描述:Cut Tape 制造商:NXP Semiconductors 功能描述:0
PH3230S 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS intermediate level FET
PH3230S,115 功能描述:MOSFET N-CH TRENCH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube