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參數(shù)資料
| 型號： | PH3230 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 50 A, 30 V, 0.0073 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235 |
| 封裝： | PLASTIC, LFPAK-5 |
| 文件頁數(shù)： | 3/13頁 |
| 文件大?。?/td> | 255K |
| 代理商： | PH3230 |
Philips Semiconductors
PH3230
N-channel enhancement mode field-effect transistor
Product data
Rev. 03 — 25 June 2003
3 of 13
9397 750 10949
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
V
GS
≥
10 V
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature.
I
AR
= 5 A; V
DD
= 15 V; duty cycle < 0.1%; R
G
≥
50
Fig 3.
Repetitive drain-source avalanche energy as a function of junction temperature.
03ah31
0
40
80
120
0
50
100
150
200
Tmb (
°
C)
Pder
(%)
03ag77
0
40
80
120
0
50
100
150
200
Tmb (
°
C)
Ider
(%)
P
der
P
tot 25 C
°
)
----------------------
100
%
×
=
I
der
I
D 25 C
°
)
------------------
100
%
×
=
03aj93
0
1
2
3
4
0
50
100
150
Tj (
°
C)
EDS(AL)R
(mJ)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PH3-230/095-22G | 制造商:FCI 功能描述: |
| PH3-230/095-36G | 制造商:FCI 功能描述: |
| PH3230CL,115 | 制造商:NXP Semiconductors 功能描述:Cut Tape 制造商:NXP Semiconductors 功能描述:0 |
| PH3230S | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS intermediate level FET |
| PH3230S,115 | 功能描述:MOSFET N-CH TRENCH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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