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參數(shù)資料
| 型號： | PH3230 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 50 A, 30 V, 0.0073 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235 |
| 封裝： | PLASTIC, LFPAK-5 |
| 文件頁數(shù)： | 8/13頁 |
| 文件大?。?/td> | 255K |
| 代理商： | PH3230 |
Philips Semiconductors
PH3230
N-channel enhancement mode field-effect transistor
Product data
Rev. 03 — 25 June 2003
8 of 13
9397 750 10949
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
I
D
= 1 mA; V
DS
= V
GS
Fig 10. Gate-source threshold voltage as a function of
junction temperature
T
j
= 25
°
C
Fig 11. Sub-threshold drain current as a function of
gate-source voltage.
T
j
= 25
°
C and 150
°
C; V
DS
>
I
D
×
R
DSon
Fig 12. Forward transconductance as a function of
drain current; typical values.
V
GS
= 0 V; f = 1 MHz
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03ah33
0
1
2
3
-80
-20
40
100
160
(V)
min
typ
max
VGS(th)
Tj (
°
C)
03ah30
10-6
10-5
10-4
10-3
10-2
10-1
ID
(A)
0
1
2
3
max.
typ.
min.
VGS (V)
03ag81
0
20
40
60
80
0
20
40
60
80
150
°
C
VDS > ID x RDSon
Tj = 25
°
C
ID (A)
gfs
(S)
03ag83
V
(V)
10
2
10
3
10
4
10
-1
1
10
10
2
DS
C
(pF)
C
iss
C
oss
C
rss
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相關代理商/技術參數(shù) |
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|---|---|
| PH3-230/095-22G | 制造商:FCI 功能描述: |
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| PH3230S,115 | 功能描述:MOSFET N-CH TRENCH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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