參數(shù)資料
型號(hào): PBSS2515E,115
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: 15 V, 0.5 A NPN low VCEsat (BISS) transistor; Package: SOT416 (SC-75); Container: Tape reel smd
中文描述: 500 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: PLASTIC, SMD, SC-75, 3 PIN
文件頁數(shù): 7/12頁
文件大小: 120K
代理商: PBSS2515E,115
PBSS2515E_2
NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 21 April 2009
4 of 12
NXP Semiconductors
PBSS2515E
15 V, 0.5 A NPN low VCEsat (BISS) transistor
FR4 PCB, standard footprint
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for collector 1 cm2
Fig 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab472
105
10
102
104
102
101
tp (s)
103
103
1
102
10
103
0
Zth(j-a)
(K/W)
1
0.1
0.05
0.02
0.01
duty cycle =
0.75
0.5
0.33
0.2
006aaa413
105
10
102
104
102
101
tp (s)
103
103
1
102
10
103
1
0.1
0.05
0.02
0.01
0
Zth(j-a)
(K/W)
1
duty cycle =
0.75
0.5
0.33
0.2
相關(guān)PDF資料
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PBSS2515M,315 15 V, 0.5 A NPN low VCEsat (BISS) transistor; Package: SOT883 (SC-101); Container: Tape reel smd
PBSS2515VPN,115 15 V low VCEsat NPN/PNP transistor - I<sub>C</sub> max: 1000 mA; IC (AV): 500 mA; Polarity: NPN / PNP ; Ptot max: 300 mW; V<sub>CEsat</sub> at I<sub>c</sub>=200 mA, I<sub>b</sub>=10 mA: 150 mV; V<sub>CEsat</sub> at I<sub>c</sub>=500 mA, I<sub>b</sub>=50 mA: 250 mV; VCEO max: 15 V; Package: SOT666 (SS-Mini); Container: Tape reel smd
PBSS2515VS,115 15 V low VCEsat NPN double transistor - Complement: PBSS3515VS ; I<sub>C</sub> max: 1000 mA; IC (AV): 500 mA; Polarity: 2 x NPN ; Ptot max: 300 mW; V<sub>CEsat</sub> at I<sub>c</sub>=200 mA, I<sub>b</sub>=10 mA: 150 mV; V<sub>CEsat</sub> at I<sub>c</sub>=500 mA, I<sub>b</sub>=50 mA: 250 mV; VCEO max: 15 V; Package: SOT666 (SS-Mini); Container: Tape reel smd
PBSS2515YPN,115 15 V low VCEsat NPN/PNP transistor - I<sub>C</sub> max: 1000 mA; IC (AV): 500 mA; Polarity: NPN / PNP ; Ptot max: 430 mW; V<sub>CEsat</sub> at I<sub>c</sub>=200 mA, I<sub>b</sub>=10 mA: 150 mV; V<sub>CEsat</sub> at I<sub>c</sub>=500 mA, I<sub>b</sub>=50 mA: 250 mV; VCEO max: 15 V; Package: SOT363 (SC-88); Container: Tape reel smd
PBSS2540E,115 40 V, 500 mA NPN low VCEsat (BISS) transistor; Package: SOT416 (SC-75); Container: Tape reel smd
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